国家/地区 中国（20）
IPC部 C（20） B（5） H（5）
IPC大类 C01（20）
IPC小类 C01B（20）
IPC C23C014/58（20）
发明人 CHIU S（2） CHIU S M（2） CHUNG C（2）
CHUNG C J（2） HUANG C（2） HUANG C H（2）
HUANG J（2） LI L（2） QIU S（2）
WU B（2） WU B H（2） ZHENG X（2）
ZHONG C（2）
公开年 2021（5） 2014（3） 2018（3） 2023（2）
申请年 2021（4）  2013（3）  2016（3）  2012（2）  2020（2）  2022（2） 
专利权人 FOUND METAL .（2） METAL IND RE.（2） NAT CENT NAN.（2） NINGBO INST .（2）

Photoanode used for photoelectrochemical decomposition of water and oxygen evolution, comprises base layer, dielectric passivation layer and sandwich composite layer arranged in sequence.

GONG J, XIE G

Preparing chiral graphene on gold substrate involves placing precursor molecule capable of synthesizing tetra anthracene alkene in crucible, heating, undergoing Ullman reaction and dehalogenation reaction by precursor molecules containing halogen groups and performing carbon-carbon coupling.

CAI J, ZHANG H, LU J

Preparation of graphene/metal film composite material for cycloaddition reaction, involves using electron beam evaporation method, preparing metal film on silicon plate, utilizing polymethyl methacrylate transfer method, and transferring graphene to surface of metal film.

ZHENG X, LIU W, YU X, YU Y, LIU J, YANG X

Preparation of ordered chiral molecular chain on substrate used as device substrate, involves heating single crystal substrate, forming double-layer graphene on substrate, placing substrate in chamber, thermally-evaporating 2,2'-diphenylethynyl-4,4'-dibromobiphenyl molecule and depositing molecules.

PI X, WANG H, LU H

Directly growing graphene thin film on surface of non-metallic substrate, involves depositing aluminum oxide film on surface of substrate, evaporating copper film on surface of substrate deposited with aluminum oxide film, annealing and growing graphene by chemical vapor deposition.

LOU G, OUYANG Y, WANG W, LIU Z

Graphene-modified silicon integrated energy storage film has graphene layer that is arranged on surface of silicon substrate, and energy storage film layer that is arranged on surface of graphene layer.

LIU M, JIN L

Sandwich structure material used for a device comprises intermediate layer comprising two-dimensional materials, and metal layers.

ZHOU J, WANG R, QIU X

Preparing graphene oxide metal nanosheet composite material comprises e.g. coating graphene oxide slurry on glass substrate, drying to form graphene oxide film, placing glass substrate of graphene oxide film into plasma etching machine.

QU X, LI L, HUANG M

Preparing ferromagnetic film epitaxial single-layer graphene involves forming a ferromagnetic film with regular hexagonal lattice properties on an insulating substrate, and matching the insulating substrate properties.

PAN M, QIU W, HU J, LI P, PENG J, HU Y, ZHANG Q

High temperature resistant graphene heat dissipating film comprises graphene heat dissipating layer and high temperature resistant nano protective layer on both sides of the graphene heat dissipating layer.

GAO C, LIU Y