国家/地区 日本（7） 韩国（6） 美国（6） 世界知识产权组织（4）
IPC部 C（7） B（3） H（3）
IPC大类 C01（7） C23（7） B01（3）
H01（3）
IPC小类 C01B（7）
IPC C23C016/02（7）
发明人 MATSUMOTO T（7） IFUKU R（4） KAGAYA M（2）
NISHIDE D（2）
公开年
申请年
专利权人 TOKYO ELECTRON LTD（7）

Film forming method involves loading substrate into processing container, forming interface layer having amorphous structure or microcrystalline structure on substrate by plasma of first mixed gas including carbon-containing gas and forming graphene film on interface layer.

NAKAMURA G, TERADA H, MATSUMOTO T, KABUKI N, WADA M, IFUKU R, NAKAMURA K, KAMURAGI N

Forming graphene structure by preparing to-be-processed substrate, pre-processing by supplying gas containing carbon containing gas to to-be-processed substrate, and forming a graphene structure on surface of to-be-processed substrate.

IFUKU R, MATSUMOTO T, SUGIURA M, RYOTA I, TAKASHI M, MASAHITO S

Production of graphene used as wiring material, involves supplying carbon-containing gas and metal catalyst into chamber and reactivating catalyst by supplying process gas and carbon-containing gas to regrow graphene on catalyst surface.

IFUKU R, MATSUMOTO T

Manufacture of graphene for fabrication of electronic device, involves adsorbing molecule having six-membered ring structure onto surface of substrate, and irradiating surface using beam of molecules containing carbon atoms.

MATSUMOTO T

Forming method of base film for graphene, involves heating substrate to temperature at which impurities are eliminated as gas, and heating substrate to temperature at which crystal grains of metal are grown in metal film.

NISHIDE D, MATSUMOTO T, KAGAYA M, IFUKU R

Production of graphene for wiring film of three-dimensional stacked memory, involves decomposing carbon-containing gas with low reactivity in space which opposes substrate, and decomposing carbon-containing gas with high reactivity.

KAGAYA M, MATSUMOTO T, NISHIDE D

Pre-processing method of catalyst metal layer during formation of graphene, involves activating catalyst metal layer by applying plasma of process gas containing reducible gas and nitrogen-containing gas to catalyst metal layer.

MATSUMOTO TAKASHI, MATSUMOTO T