国家/地区 美国（40） 韩国（23） 世界知识产权组织（20） 中国（18） 日本（18） 欧洲专利局（EPO）（13） 台湾（8） 德国（4） 英国（2）
IPC部 B（45）
IPC大类 B32（45）
IPC小类 B32B（45）
IPC C23C016/26（45）
发明人 CHOI J（5） SHIN H（4） AHN J（3）
CHOI J Y（3） HONG B H（3） LEE S（3）
SHIN H J（3） YOON S（3） YOON S M（3）
AHN J H（2） FAN F Y（2） FAN S（2）
HUNLEY D P（2） JIANG K（2） LI Y（2）
公开年 2013（15） 2012（12） 2016（5） 2009（3） 2011（3） 2021（2）
申请年 2012（13）  2011（12）  2013（6）  2009（4）  2015（4）  2016（2） 
专利权人 SAMSUNG ELEC.（6） GRAPHENE SQU.（2） HON HAI PREC.（2） HONGFUJIN PR.（2）
INT BUSINESS.（2） TE CONNECTIV.（2） TYCO ELECTRO.（2） UNIV KENTUCK.（2）
UNIV SUNGKYU.（2） UNIV TSINGHU.（2）

Preparing graphene copper composite material useful in supercapacitors and motor drive devices, comprises e.g. pre-setting multi-layer copper foil in hot pressing chamber, adopting chemical vapor deposition, preparing graphene film on copper foil surface, and sintering graphene-copper.

GONG M, ZHAO M, LI M, CHEN C, CHEN Q, YANG W, LI Y, WANG Y, LIU B, PEI Z, ZHANG X, LIANG J

Carrier substrate for transferring transfer layer from carrier substrate to product substrate, comprises carrier base substrate, protective layer, and transfer layer grown on protective layer.

BURGGRAF J, JUERGEN B

Transferring graphene involves forming graphene on first substrate, forming polymer precursor mixture on second substrate, providing graphene oppositely to second substrate having polymer precursor mixture.

GU T J, JANG W, SEO Y, WHANG D, WHANG D M, SEO Y M, JANG W S

Manufacture of porous graphene layer used for e.g. textile industries, involves carrying out chemical vapor deposition of carbon source on catalytically active substrate which catalyzes graphene formation, and forming graphene.

PARK H G, HEIGHT M, CHOI K, PARK H

Graphene film manufacturing device comprises wrinkles flattening device, base substrate, graphene film, porous adsorption member, hollow space and vacuum suction port.

WAN S K, HEE H J, HEE H B, KIM W S, HAN J H, HONG B H

Process for forming high surface area graphene structure of super-capacitor used with battery, involves removing silicide regions to provide silicon carbide structure having highly irregular surface and surface layer of graphene.

AHMED M, IACOPI F

Method for preparing graphene conductive film for flexible touch device, involves growing graphene layer on metal-catalyzed base, and coating polyamic acid solution layer on graphene layer, where polyimide film is formed by thermal curing.

DI Y

Method for transferring high-quality chemical vapor deposition-grown monolayers of graphene from copper formation substrates to target substrates, involves transferring graphene layer formed on formation substrate to target substrate.

JOHNSON B Y, MAZUMDER P, SONI K K

Susceptor has first fluoro polymer layer that is arranged on first surface of susceptor portion, and graphene layer is arranged on first fluoro polymer layer.

VISSER R J, JEONG S, DODABALAPUR A

Use of amine precursor or its ammonium salt for depositing graphene film on substrate by chemical vapor deposition (CVD).

SCHWAB M G, MUELLEN K, SACHDEV H, ITO Y, SCHWAB M G S, MILLEN K