国家/地区 中国（7） 美国（7） 韩国（6） 世界知识产权组织（6） 日本（4） 台湾（4） 欧洲专利局（EPO）（2） 英国（2）
IPC部 C（15）
IPC大类 C01（15）
IPC小类 C01B（15）
IPC C23C016/26（15）
发明人 GLASS H（2） GUINEY I（2） SHIN H（2）
THOMAS S（2） TYLER M（2） WALLIS R（2）
公开年 2021（11） 2020（3）
申请年 2020（15）
专利权人 PARAGRAF LTD（2） SAMSUNG ELEC.（2）

Preparation method of copper-based graphene, involves removing copper-based graphene precursor from impurities by solvent separation method, and drying copper-based graphene precursor to form copper-based graphene finished product.

WU G, QIAN T, CAO H, MA Y, SHEN H

Silicon-based-carbon composite useful in cathode material of lithium secondary battery, comprises core-shell structure, where core includes e.g. silicon and magnesium silicate, and the shell includes first and second carbon layers.

HYUN L J, HUNSOO P, LEE S, HEE L, LIM J

Continuous production apparatus of multiple types of carbon film, comprises reduction section for reducing substrate placed on belt conveyor, and raw material carbon source supply section that supplies raw material carbon source.

WATANABE J

Carrier substrate for transferring transfer layer from carrier substrate to product substrate, comprises carrier base substrate, protective layer, and transfer layer grown on protective layer.

BURGGRAF J, JUERGEN B

Applying functional compound on sulfur particles for forming treated sulfur particles, involves using coating composition containing inorganic electroconductive compound, electroconductive carbon compound and organic precursor compound.

HAVERMANS D, SALLARD S, SHAFIQUE A, VANGENEUGDEN D, VANHULSEL A, HARDY A, SALAH S, SHAFIK A, VAN GENUGDEN D, HARDY N

Carbon film comprises first layer containing flat graphene, and second layer formed on the first layer containing arc-shaped graphene.

OOTA R, NAKANISHI K, OZAWA Y

Film forming by cleaning interior of treatment container, extracting and removing oxygen inside treatment container, introducing substrate into treatment container, and forming carbon film on substrate by plasma chemical vapor deposition.

MAKOTO W, TAKASHI M, NOBUTAKE K, RYOTA I, MASAHITO S, HIROKAZU U, MATSUMOTO T, KABURAGI N, IFUKU R, SUGIURA M, UEDA H, WADA M, KABUKI N

Preparing graphene film useful in thin film transistor comprises preparing graded porous silica film filled with metal catalyst, depositing graphene on surface of graded porous silicon dioxide film and removing graded porous silica film.

XIA Y, ZHUO E, YU S

Depositing graphene on a metal surface of substrate by providing substrate including metal surface in reaction chamber, flowing hydrocarbon precursors into reaction chamber and toward the substrate, and generating radicals of hydrogen.

VARADARAJAN B N, NARKEVICIUTE I

Preparation of micro super capacitor used for manufacturing large integrated circuit, involves pretreating catalytic metal, preparing graphene, designing photomasking mask plate, preparing graphene microelectrode, and adding gel electrolyte.

NING J, FENG X, WANG D, ZHANG J, MU M, HAO Y