国家/地区 中国（15） 美国（10） 韩国（7） 世界知识产权组织（6） 日本（4） 欧洲专利局（EPO）（3） 台湾（3）
IPC部 C（23） H（9） B（3）
IPC大类 C01（23） C23（23） H01（9）
IPC小类 C01B（23）
IPC C23C016/26（23）
发明人 BYUN K（2） BYUN K E（2） KIM S（2）
LEE C（2） LEE C S（2） LEE E（2）
LI Y（2） SHIN H（2） SHIN H J（2）
WANG X（2）
公开年 2021（23）
申请年 2021（23）
专利权人 SAMSUNG ELEC.（2） TOKYO ELECTR.（2） UNIV SINGAPO.（2）

Method for forming film e.g. graphene film on substrate, involves supplying aromatic hydrocarbon gas having functional group, to substrate on which base film is formed, and activating aromatic hydrocarbon gas adsorbed on surface of base film by plasma of reaction gas containing rare gas.

MATSUMOTO T, IFUKU R

Graphene cold wall growth device, has power supply whose two poles pass through two through holes of reaction chamber, where two poles of power supply are connected with upper electrode plate and lower electrode plate.

CHEN Z, JI N, SHEN C, XU S, ZHANG J

Graphene composite film comprises graphene composite film main body comprising carbon nano-tube film substrate, and copper substrate.

MAO J

Conductive structure, comprises conductive material layer including metal and work function control layer including two-dimensional material with defect, to control work function of conductive structure.

LEE C, KIM C, LEE E, BYUN K, KIM S, SHIN H, SHIN H J, BYUN K E, LEE C S, LI C, JIN C, LI Y, JIN S, SHEN X

Transparent electrode for photovoltaic cells, comprises transparent substrate and composite layer including graphene layer and nanoparticles that are embedded in graphene layer and extended through thickness of graphene layer.

ELSAYED K A M, MAAROUF A A

Industrial mass production of vertical graphene composite carbon felt involves soaking carbon felt in acid solution, vibrating, repeatedly washing soaked carbon felt with deionized water, drying, and putting carbon felt on roller device.

QIN C, LI T, WANG Q, LOU H, SHI L, LUO L, HUANG S

Semiconductor device e.g. monolithic three-dimensional integrated circuit, has microelectronic components embedded in single crystalline dielectric material, where material contains carbon with diamond structure or hexagonal boron nitride.

CLARK R D, CLARK R

Seed layer for inducing nucleation to form layer of material used for fabricating semiconducting devices, comprises layer of two-dimensional monolayer amorphous material with disordered atomic structure to form electric potential wells for bonding adatoms to seed layer by van der Waals interaction.

OEZYILMAZ B, TOH C T, ABIDI I H, OJIYLMAZ B, TOH C, ZHUO Z, OZYILMAZ B

Directly growing graphene thin film on surface of non-metallic substrate, involves depositing aluminum oxide film on surface of substrate, evaporating copper film on surface of substrate deposited with aluminum oxide film, annealing and growing graphene by chemical vapor deposition.

LOU G, OUYANG Y, WANG W, LIU Z

Transferring graphene involves forming graphene on first substrate, forming polymer precursor mixture on second substrate, providing graphene oppositely to second substrate having polymer precursor mixture.

GU T J, JANG W, SEO Y, WHANG D, WHANG D M, SEO Y M, JANG W S