国家/地区 美国（11） 韩国（6） 世界知识产权组织（5） 日本（4） 中国（3） 台湾（2）
IPC部 C（11）
IPC大类 C01（11） C23（11） B82（4）
H01（2）
IPC小类 C01B（11）
IPC C23C016/452（11）
发明人 NAGEL C J（5） BRODEUR C L（4） MATSUMOTO T（2）
NARKEVICIUTE I（2） VARADARAJAN B N（2）
公开年 2021（5）
申请年 2020（3）  2021（2）  2022（2） 
专利权人 QUANTUM ELEM.（5） LAM RES CORP（2） TOKYO ELECTR.（2）

Process for instantiating elemental metal within ultramicro pore of nanoporous carbon powder composition involves initiating gas flow in reactor assembly, reactor chamber containing nanoporous carbon powder, first porous frit, second porous frit, reactor head space, and computer processing unit.

BRODEUR C L, NAGEL C J

Reactor assembly comprises gas inlet and one or more gas outlets and reactor chamber containing nanoporous carbon material arranged within cup and covered with cap, where first porous frit defining floor of reactor chamber arranged within cup and covered with cap, and second porous frit.

BRODEUR C L, NAGEL C J

Reactor assembly comprises gas inlet, gas outlets, reactor chamber, porous frits having porosity and comprising nanoporous carbon material, reactor head space, reactor assembly lamps, and computer processing unit.

NAGEL C J, BRODEUR C L

Performing quantum printing metal within nanoporous carbon powder involves adding nanoporous carbon powder into reactor assembly (RA) comprises gas inlet and one or more gas outlets, reactor chamber containing nanoporous carbon powder.

NAGEL C J

Reactor assembly comprises gas inlet and one or more gas outlets, reactor chamber containing nanoporous carbon material, first porous frit defining floor of reactor chamber, second porous frit defining ceiling of the reactor chamber.

NAGEL C J, BRODEUR C L

Encapsulating graphene in semiconductor substrate, comprises selectively depositing graphene on metal layer, depositing metal oxide over graphene by thermal-based deposition technique, and depositing hermetic barrier over metal oxide.

VARADARAJAN B N, NARKEVICIUTE I, SHARMA K

Depositing graphene on a metal surface of substrate by providing substrate including metal surface in reaction chamber, flowing hydrocarbon precursors into reaction chamber and toward the substrate, and generating radicals of hydrogen.

VARADARAJAN B N, NARKEVICIUTE I

Directly growing of carbon material in production of high-quality graphene, involves adsorbing carbons onto substrate by supplying carbons to substrate, and removing unreacted carbon residues from substrate after supplying carbons.

KIM C, SHIN H, BYUN K, SHIN K, LEE C, NAM S, AN S, LEE J, CHO Y, SHIN H J, BYUN K E, SHIN K W, LEE C S, NAM S G, AHN S J, LEE J H, LEE J I, CHO Y C

Manufacture of graphene for fabrication of electronic device, involves adsorbing molecule having six-membered ring structure onto surface of substrate, and irradiating surface using beam of molecules containing carbon atoms.

MATSUMOTO T

Production of graphene for wiring film of three-dimensional stacked memory, involves decomposing carbon-containing gas with low reactivity in space which opposes substrate, and decomposing carbon-containing gas with high reactivity.

KAGAYA M, MATSUMOTO T, NISHIDE D