国家/地区 美国（15） 世界知识产权组织（13） 欧洲专利局（EPO）（9） 日本（8） 韩国（8） 中国（6） 波兰（6） 台湾（3） 法国（2） 印度（2）
IPC部 C（26） B（11） H（9）
IPC大类 C01（26） C30（26） C23（13）
H01（9） B82（7） B01（2）
B32（2）
IPC小类 C01B（26）
IPC C30B025/02（26）
发明人 ATRASZKIEWICZ R（2） BABUL T（2） COJOCARU C（2）
DYBOWSKI K（2） KULA P（2） MODRZYK W（2）
OBUCHOWICZ Z（2） PIETRASIK R（2） ZHANG Y（2）
公开年 2014（8） 2021（4） 2013（3） 2011（2） 2015（2）
申请年 2013（5）  2014（5）  2012（4）  2020（3）  2011（2）  2016（2）  2021（2） 
专利权人 CENT NAT REC.（2） ECOLE POLYTE.（2） ZHANG Y（2）

Preparing composite dimension carbon atom framework van der Waals homogeneous structure temperature control physical defogging film comprises e.g. preparing powder-shaped carbon nanotube material, spraying cellulose acetate by connecting cellulose acetate solution and obtaining defogging film.

JIANG X, DONG H, TIAN B

Producing epitaxial structure useful in flexible electronic device comprises providing multilayer graphene layer having through-holes, providing single crystal substrate having graphene layer formed and growing semiconductor structure.

HONG Y, JUNG J S, JUNGJOONSUCK

Coating metal workpiece e.g. electrical connector, involves exposing workpiece to carbon-containing precursor gas and hydrogen gas at preset flow rate and total gas pressure, and exposing to carbon-containing precursor gas and carrier gas.

ADAMS H J

Making bilayer graphene domain used to make optoelectronic devices, comprises e.g. dissolving decaborane into phenyl methyl ether, and coating obtained decaborane/phenyl methyl ether solution to cleaned metal foil/film layer.

LING D, LIU J, WEI D, ZHANG Q, HE X

System for growing crystalline material, has optical emission spectrometer (OES) that controls parameter in closed loop and maintains required proposition of plasma constituent for growth of crystalline materials in microwave plasma reactor.

SHARDA T, BHANDARI R, RAJNEESH B, TARUN S

Producing carbon structures containing graphene on surface of spatially shaped metal elements made of copper or its alloys, in chemically active gas working atmosphere containing inert shielding gas, by soaking materials in sealed retort.

BABUL T, OBUCHOWICZ Z, JONCZYK S, BARANOWSKI M, KONDEJ A

Preparation of graphene on surface of silicon carbide, involves subjecting silicon carbide crystal with crystallographic orientation of surface to specified pressure, annealing under preset pressure, and annealing in stream of silicon atoms.

CIOCHON P, KOLODZIEJ J, CICHON P

Composite material used for manufacturing graphene film, consists of single-crystal sapphire substrate having off-angle degree of specified value, metal film and graphene film, in order.

AOTA NATSUKO, AIDA HIDEO, TACHIBANA MASARU, MORISAKO SHIYO, AOTA N, AIDA H, TACHIBANA M, MORISAKO S

Producing single or multi layered graphene-containing carbon structures on a surface of grains of copper powder and/or its alloy comprises e.g. mixing copper or its alloy powder and inert powder, and annealing at a fluidized temperature.

BABUL T, OBUCHOWICZ Z, KOWALSKI S, BLASZCZYK J

Manufacture of monocrystal graphene film for semiconductor device, involves forming polycrystalline graphene on substrate using hydrocarbon gas, growing graphene film, forming catalyst, heating and recrystallizing.

HWANG C, HWANG C Y