国家/地区 美国（9） 世界知识产权组织（5） 韩国（4） 台湾（4） 中国（2）
IPC部 B（11）
IPC大类 C01（11） H01（11） B01（7）
B82（5） C23（5） B05（2）
B32（2）
IPC小类 C01B（11）
IPC H01J037/32（11）
发明人 ANZELMO B H（2） STOWELL M W（2）
公开年 2015（2） 2016（2） 2021（2）
申请年 2013（3）  2015（2）  2020（2） 
专利权人 LYTEN INC（2）

Depositing graphene or graphene oxide onto substrate from gaseous source of carbon precursor involves using plasma-enhanced chemical vapor deposition method, where carbon precursor consists of ethylene and the process is carried out in absence of carrier gas.

JOUIAD M, EL MARSSI M, LEJEUNE M

Producing photoluminescence material involves placing plastic piece into working solution which is water, applying micro-plasma onto surface of the working solution, and degrading the plastic piece into multiple smaller molecular and graphene quantum dot.

CHIANG W, WENG R, WENG R J

Reactor system for producing carbon-containing powder, has microwave energy source, control circuit having output to generate control signal to adjust pulse frequency of microwave energy, voltage generator, and field-enhancing waveguide.

STOWELL M W, PHAM T V, ANZELMO B H, RISO T, RIESLE T, FAN D

Reactor system useful for producing carbon agglomerates, comprises microwave energy source configured to generate microwave energy, field-enhancing waveguide, expansion chamber in fluid communication with constricted region and configured to expand plasma, and outlet.

TANNER D, COOK D, ANZELMO B H, KALLURI R, STOWELL M W

Device useful in graphene manufacturing device to coat particle surface with graphene using underwater plasma discharge, comprises e.g. chamber having solution and particles dispersed in solution, discharge electrode and power supply unit.

PARK H J, KANGIL K, HONG Y C

Graphene film manufacturing device comprises wrinkles flattening device, base substrate, graphene film, porous adsorption member, hollow space and vacuum suction port.

WAN S K, HEE H J, HEE H B, KIM W S, HAN J H, HONG B H

Graphene producing device has cathode and anode which are configured to create arc discharge producing flux stream, and to deposit material from flux stream on substrate.

KEIDAR M, SHASHURIN A

Manufacturing graphene film involves providing substrate, distributing graphene slurry on substrate, causing graphene slurry to distribute on substrate, and treating graphene slurry with atmosphere pressure plasma jet.

CHENG I, CHEN J, HSU C, CHOU P, LIU H, CHANG H, LIANG S, WU T, CHENG I C, CHEN J Z, HSU C C, CHOU P T, LIU H W, LIANG S P, WU T J

Etching method of graphene, involves etching exposed portions of graphene to form etched graphene structure, after applying resist to surface of graphene opposite to patterned substrate.

ANDERSON K, SJONG A

Restoring properties including charge neutrality point, doping state, carriers and conductivity of graphene used for silicon treatment of graphene, comprises grounding graphene, and exposing graphene to plasma having specified density.

CHOI J, YOO W, LEE S, LIM Y, CHOI J Y, LEE S H, LIM Y D, YOO W J