国家/地区 中国（5） 美国（5） 欧洲专利局（EPO）（3） 日本（3） 韩国（3） 世界知识产权组织（2）
IPC部 C（9）
IPC大类 C01（9） H01（9） C23（6）
B82（2）
IPC小类 C01B（9）
IPC H01L021/02（9）
发明人 AHN S J（2）
公开年 2019（3） 2020（3） 2021（3）
申请年 2019（9）
专利权人 SAMSUNG ELEC.（2）

Depositing layer of carbon nanostructures on substrate by providing substrate in processing chamber, providing processing gas in processing chamber having carbon monoxide gas and creating and sustaining gaseous plasma in processing chamber.

ZAPLOTNIK R, MOZETIC M, PRIMC G, VESEL A, HORI M, ODA O

Method for preparing graphene wafer in batches using carrier, involves using chemical vapour deposition process to prepare graphene film on substrate, in which angle between gas flow direction and substrate is provided with specified value.

LIU Z, JIANG B, GAO X

Manufacturing graphene-metal structure for semiconductor device by subjecting graphene to surface treatment and forming metal layer on surface-treated graphene.

KIM J H, LEE S Y, AHN S J, KIM J, LIM H S

Forming graphene layer for e.g., LEDs, by mixing carbon source with horizontally oriented molten solvent, precipitating carbon source to form graphite layer across molten solvent, and separating graphite layer into a set of graphene layers.

SUNG C, HU S C, LIN I, YU C

Method of forming graphene on substrate, involves treating surface of substrate placed in reaction chamber with plasma, and growing graphene on surface of substrate by plasma enhanced chemical vapor deposition (PECVD).

SHIN K, KIM C, YAMAMOTO K, LEE C, SONG H, LEE E, BYUN K, SHIN H, AN S, SHEN J, JIN C, SHAN B, LI C, SONG X, LI Y, BIAN Q, SHEN X, AN X, SHIN K W, LEE C S, SONG H J, BYUN K E, SHIN H J, AHN S J

Method for manufacturing multilayer graphene, involves subjecting graphene precursor to chemical vapor deposition on metal substrate containing nonmetal element, manufacturing graphene that is doped with element on metal substrate.

CHO K, YOO M S, LEE H C, CHO K W, ZHAO J, YU M, LI X

Processing graphene thin film material useful in field-effect transistor, optoelectronics and microprocessor field, comprises e.g. adjusting carrier sample stage to processing positioning point and performing selective scanning modification.

XIE J, QU F, XIA Y, LI N, ZHAO L, GUAN Y

Opening graphene band gap comprises e.g. separately preparing gallium oxide layer and graphene layer, transferring the graphene layer onto the gallium oxide layer, and changing the electronic structure of the graphene.

SU J, YUAN H, LIN Z, CHANG J, HAO Y

Graphene nanoribbon precursor for use in graphene nanoribbon that is utilized in electronic device for channel of FET and resonant tunneling diode, comprises substituted terphenyl compound.

YAMAGUCHI J