国家/地区 中国（8）
IPC部 C（8）
IPC大类 C01（8） H01（8） C23（6）
IPC小类 C01B（8）
IPC H01L021/02（8）
发明人 LIU Z（2）
公开年 2021（8）
申请年 2021（4）  2020（3） 
专利权人 UNIV SINGAPO.（2）

Preparation of ordered chiral molecular chain on substrate used as device substrate, involves heating single crystal substrate, forming double-layer graphene on substrate, placing substrate in chamber, thermally-evaporating 2,2'-diphenylethynyl-4,4'-dibromobiphenyl molecule and depositing molecules.

PI X, WANG H, LU H

Manufacture of dense layer of electrochemical device, involves providing substrate and suspension of non-agglomerated nanoparticles of material having specific particle size distribution, depositing layer on substrate, drying and densifying.

GABEN F

Seed layer for inducing nucleation to form layer of material used for fabricating semiconducting devices, comprises layer of two-dimensional monolayer amorphous material with disordered atomic structure to form electric potential wells for bonding adatoms to seed layer by van der Waals interaction.

OEZYILMAZ B, TOH C T, ABIDI I H, OJIYLMAZ B, TOH C, ZHUO Z, OZYILMAZ B

Growing nitride comprises preparing substrate, manufacturing graphene buffer layer on substrate, patterning graphene buffer layer to obtain patterned graphene buffer layer, and growing nitride on patterned graphene buffer layer.

LIU Z, FENG T, LIANG M, YI X, WANG J, LI J

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A

Producing graphene sensor element used for analyzing gas sample, by forming graphene layer on growth substrate, applying fluoropolymer coating layer, removing substrate, transferring onto substrate, and removing fluoropolymer coating layer.

SHERWOOD G J, NELSON J T, SU Q, BUHLMANN P P J, ZHEN X, KOESTER S J

Depositing graphene on a metal surface of substrate by providing substrate including metal surface in reaction chamber, flowing hydrocarbon precursors into reaction chamber and toward the substrate, and generating radicals of hydrogen.

VARADARAJAN B N, NARKEVICIUTE I

Method for preparing graphene wafer in batches using carrier, involves using chemical vapour deposition process to prepare graphene film on substrate, in which angle between gas flow direction and substrate is provided with specified value.

LIU Z, JIANG B, GAO X