国家/地区 美国（7） 日本（6） 中国（2） 欧洲专利局（EPO）（2） 韩国（2）
IPC部 C（7）
IPC大类 C01（7） H01（7） C23（2）
IPC小类 C01B（7）
IPC H01L021/285（7）
发明人 SAKAI T（3） KAJITA A（2） KITAMURA M（2）
SAITO T（2） SAKATA A（2） WADA M（2）
YAMAZAKI Y（2）
公开年 2016（4） 2015（3）
申请年 2015（7）
专利权人 TOSHIBA KK（3）

Semiconductor device such as metal oxide semiconductor (MOS) transistor and capacitor, has graphene layer with first graphene layer and is provided on second catalyst region.

SAITO T, KITAMURA M, SAKATA A, WADA M, KAJITA A, SAKAI T

Method for processing substrate used in manufacture of e.g. electronic devices, involves forming graphene layer from specific layer on surface of carrier by temperature treatment.

PRUEGL K, RUHL G, RUHR G, PRUGER K

Method for manufacturing semiconductor device, involves forming first film, pattern of second film on upper surface of first film and graphene film on upper surface of first film and from side surface of pattern of second film.

ISOBAYASHI A, KITAMURA M, YAMAZAKI Y, KAJITA A, SAITO T, ISHIKURA T, SAKATA A, SAKAI T, WADA M

Forming method of base film for graphene, involves heating substrate to temperature at which impurities are eliminated as gas, and heating substrate to temperature at which crystal grains of metal are grown in metal film.

NISHIDE D, MATSUMOTO T, KAGAYA M, IFUKU R

Method of manufacturing graphene layer on substrate, involves laminating metalized graphene layer to second substrate.

LIPOMI D J, ZARETSKI A, LIPOMI D

Wiring comprises a graphene having 5-7 membered ring-dense regions useful for improving the electrical conductance.

YAMAZAKI Y, YOSHIDA T, NISHIDA Y, MIYAZAKI H, ALGA F, SAKAI T, AIGA F

Manufacturing method of graphene film, involves removing catalyst metal film in oxidation atmosphere of oxidizer and transferring graphene film to substrate.

KONDO D, NAKANO H, KONDO T, NAKANO M