国家/地区 美国（17） 世界知识产权组织（14） 中国（12） 韩国（9） 欧洲专利局（EPO）（8） 日本（7） 英国（2） 新加坡（2）
IPC部 B（22）
IPC大类 C01（22） B82（13） H01（10）
B32（6） C23（6） B01（4）
C30（3） C04（2） C09（2）
C25（2）
IPC小类 C01B（22）
IPC C01B032/186（22）
发明人 KIM K（2） KIM S（2） LI X（2）
公开年 2015（22）
申请年 2014（11）  2015（8）  2013（3） 
专利权人 SAMSUNG TECH.（2）

Multilayer structure of capacitor, has first and third layers each form one of two dee-trodes and comprise pyrolysed carbon nanomembranes or layers of graphene, and second layer is dielectric comprising car-bon nanomembranes.

BEYER A, GOLZHAUSER A, PENNER P, ZHANG X, GOELZHAEUSER A

Graphene structure for electronic component e.g. transistor, comprises two-dimensional base graphene layer having defect, and linking material formed at defect of base graphene layer.

SUNG M, KIM S, MO S M, KIM S J, CHENG M

Apparatus for manufacture of graphene, has reactor supplied with gas comprising carbon compound and charged with catalyst having silicon carbide, nickel and zeolite, and microwave exposure portion for irradiating microwave to catalyst.

MIYAKOSHI A

Functionalized graphene used to identify defects present in the graphene plane, comprises at least one functional group covalently bonded directly to edge of graphene plane, where the functional group is e.g. nitro, amine, halide.

BLANFORD C, HARTMANN M, FLITSCH S, WEHNER M

Photodiode useful in optoelectronic device, comprises e.g. a silicon quantum dot layer containing silicon quantum dots formed on silicon oxide thin film and a graphene-silicon quantum dot hybrid structure formed on silicon quantum dot layer.

SUK H C, DONG H S, SUNG K, CHOI S H, SHIN D H, KIM S, CHIO S, SHIN D, JIN C, DONGHEE S, SHIGAO C, SUNGKIM

Electrochemical etching method used for metal substrate involves forming electrically conductive polymer on graphene layer such that metal plate is coupled to graphene layer, then disposing metal substrate layer in electrolyte.

GUO L, HAN S, LI X

Formation of graphene scroll for synthesizing graphene article, involves annealing catalyst substrate in hydrogen gas, exposing substrate to reaction gas mixture, detaching substrate from graphene and consolidating synthesized graphene.

VLASSIOUK I V, IVANOV I N, DATSKOS P G

Three-dimensional framework-shaped graphene nanocrystalline crystal-array zinc oxide composite material is obtained by depositing three-dimensional graphene on nanocrystalline zinc oxide crystal surface by chemical vapor deposition.

LIU J, LI S, LI X, MA Y, YU M, LIU S

Preparation of size-controlled graphene quantum dots involves depositing metal catalyst on clean substrate, etching metal thin film, supplying substrate, carbon source and reducing gas to reactor and purifying graphene quantum dots.

FENG W, LIU Y, YANG L, ZHANG J

Production of graphene for graphene sheet manufacture involves adding metal catalyst in reaction chamber, adding hydrocarbon gas in reaction chamber, allowing metal catalyst and hydrocarbon gas to make contact, and dehydrogenating.

CARLSON W B, CASASANTA V, WAN F, ROBERTS B K, LONDERGAN T M