国家/地区 韩国（16） 美国（4） 中国（3） 世界知识产权组织（3） 日本（2）
IPC部 C（16）
IPC大类 C01（16） H01（8） B82（4）
B01（3） B32（2） C23（2）
IPC小类 C01B（16）
IPC C01B031/04（16）
发明人 JIN W C（2） LEE T W（2） SI J S（2）
公开年 2016（5） 2017（4） 2015（3） 2012（2）
申请年 2014（5）  2016（5）  2013（2） 
专利权人 POSTECH ACADIND FOUND（16）

Producing bismuth graphene oxide useful for adsorbing iodine, comprises oxidizing graphite, and reacting graphene oxide with bismuth nitrate.

HANSANGSOO, UM W, SEOK K W

Band gap-retained graphene useful for graphene-based semiconductor and electronic devices, comprises graphene, and an ion provided on the graphene.

CHUNG J W, KIM J G

Surface processing method for graphene substrate of e.g. organic LED used in electronic device, involves forming organic material on one portion of graphene and surface-processing and forming dielectric thin film on organic material.

JAE Y B, SE J K, HYUN J S

Nanoparticle composite used as anode active material for negative electrode for hybrid capacitor, comprises reduced graphine oxide and core-shell nanoparticles on reduced graphene oxide.

LEE J, LIM E

Graphene laminate used in electrode for electronic device chosen from e.g. organic thin-film transistor and organic solar cell, comprises graphene layer comprising electron-donating functional group, and another graphene layer.

CHO K, KIM H, KANG B S, GANG B, KANG B

Band gap-maintaining graphene comprises graphene and cesium ions absorbed on graphene.

JIN W C, SI J S

Graphene with band gap, comprises graphene and alkali metal ion, and has controlled size.

JIN W C, SI J S

Manufacturing method of silicon carbide semiconductor device, involves forming protective layer on silicon carbide substrate into graphene, activating impurity, and removing protective layer.

KYEONG K C

New 2,2'-bipyridine-containing metallic complexes useful in graphene-metal complex composite for electronic device, preferably field-effect transistor, light detecting device, capacitor, battery, solar cell and light-emitting diode.

OH J H, LEE E K, LIU X

Producing graphene thin film, comprises producing precursor layer using coal tar or coal tar pitch on first substrate, producing catalyst layer on precursor layer, heat treating catalyst layer under inert gas atmospheric, and cooling.

LEE T W, SEO H K