国家/地区 中国（30）
IPC部 C（30）
IPC大类 C01（30） C23（5） C03（2）
IPC小类 C01B（30）
IPC C01B032/186（30）
发明人 LIU Z（19） ZHANG J（12） PENG H（11）
SUN L（6） SUN Y（6） XU S（6）
GAO Z（4） LIN L（4） CAO F（3）
CHEN Z（3） LI Y（3） LIU H（3）
WANG K（3） WANG X（3） YANG H（3）
公开年 2021（12） 2018（5） 2019（5） 2017（4） 2020（3）
申请年 2019（10）  2020（6）  2017（4）  2021（4）  2016（3）  2018（2） 
专利权人 UNIV PEKING（30）

Divided-area type graphene preparation device has carrier whose upper part is provided with finite field baffle, slit and carrier that are extended to receiving cavity by discharging cavity, and carrier whose lower part is provided with heater.

LI Q, MA Z, ZHU A, SUN L, CHEN H, LIU Z

Device for preparing graphene by plasma enhanced chemical vapor deposition (PECVD), has first region of deposition furnace that is provided with overlapped portion, and second polar plate that is connected to grounding end of plasma source.

LIU Z, WU Q, CAO F, WANG X, WANG K, YANG H, PENG H

Carrier for batch preparation of graphene film comprises supporting plates for placing substrate for growing graphene, heating plates for heating substrate, and electrode assembly connected with heating plates.

ZHU Y, MA Z, GAO X, SHAN J, JIA K, PENG H, LIU Z

Graphene cold wall growth device, has power supply whose two poles pass through two through holes of reaction chamber, where two poles of power supply are connected with upper electrode plate and lower electrode plate.

CHEN Z, JI N, SHEN C, XU S, ZHANG J

Method for forming graphene-substrate composite structure, involves fixing substrate through chemical vapor deposition chamber continuously at certain rate, where chemical vapor deposition in chemical vapor deposition chamber is deposited on substrate.

QI Y, CHENG Y, LI J, SHI P, LIU Z

Preparation method of graphene-ceramic composite material, involves providing radiating ceramic substrate, introducing carbon source, and performing plasma chemical vapor deposition reaction on radiating ceramic substrate to grow graphene layer.

ZHANG Y, SHAN J, LIU Z

Preparing powdered graphene by passing inert gas into microwave plasma chemical vapor deposition to generate plasma, passing carbon source-nucleation density inhibitor mixed gas into microwave plasma chemical vapor deposition system to perform vapor phase growth and directly collecting graphene.

ZHANG J, SUN Y

Enhancement of third harmonic of graphene material involves preparing graphene film, measuring third harmonic spectrum, coating quantum dot film, and selecting two-photon absorption wavelength to resonate with laser emission wavelength.

LIU K, WU C, HONG H

Polyethylene-graphene composite material comprises polyethylene and graphene.

ZHANG J, SUN Y, GONG H

Preparing vertical graphene-based thermal interface material comprises preparing vertical graphene through plasma-enhanced chemical vapor deposition process under action of electric field.

ZHANG J, XU S, JI N, CHEN Z