国家/地区 中国（12）
IPC部 C（12）
IPC大类 C01（12） C23（3） C04（2）
IPC小类 C01B（12）
IPC C01B032/186（12）
发明人 YANG H（12）
公开年 2021（6） 2022（2）
申请年 2020（3）  2021（3）  2014（2）  2019（2） 
专利权人 BEIJING GRAP.（3） UNIV PEKING（3） CHANGZHOU 2D.（2） UNIV ZHEJIAN.（2）

Preparing vertical oriented graphene by using carbon dioxide and methane as raw material, comprises pre-heating substrate material needing to grow vertical orientation graphene, and introducing mixed gas of carbon dioxide/methane and growing graphene.

CEN K, YAN J, SU M, YANG H, BO Z

Silicon-based bonded graphene radiating copper-clad ceramic substrate comprises copper foil layer orderly set from up to down, ceramic layer and silicon-based bonding graphene coating set on lower surface of ceramic layer.

LIANG X, JIA T, WU X, SUN X, YANG H, ZHANG G, RUAN S

Device for preparing graphene by plasma enhanced chemical vapor deposition (PECVD), has first region of deposition furnace that is provided with overlapped portion, and second polar plate that is connected to grounding end of plasma source.

LIU Z, WU Q, CAO F, WANG X, WANG K, YANG H, PENG H

Method for modifying graphene metamaterial based on edge topology optimization, involves taking advantage of characteristic edges of graphene are more prone to reaction, graphene metamaterial directly processed by gas or solution containing doped atoms to obtain edge-modified graphene metamaterial.

YANG H, WU Z

Method for preparing vertically-oriented graphene without external gas carbon source involves e.g. treating and adding base material with waste oil into chemical vapor deposition reaction cavity, vacuumizing, passing argon gas and cooling.

YAN G, LI Z, KUANG W, LI Y, YANG H, BO Z

Device for large-scale continuously preparing vertically oriented graphene by plasma comprises e.g. vacuum chamber with baffle valve and connected to vacuum pump, and used to generating and emitting microwaves into vacuum chamber.

BO Z, YANG H, SU M, XU C

Graphene composite metal foil double-side growth device has chemical vapor deposition furnace comprising plasma glow region and heating growth region, and connected with unwinding shaft and winding shaft on both sides.

PENG H, CAO F, YANG H, WANG K, WANG X, LIU Z

Carrier used for preparing graphene by plasma enhanced chemical vapor deposition, comprises two oppositely set polar plates and growth substrate, where carrier comprises sleeve, hollow structure, first supporting parts and second supporting parts.

PENG H, WANG K, YANG H, WANG X, CAO F, WU Q, LIU Z

Three-dimensional porous graphene skeleton-single-wall carbon nanotube flexible composite material useful as flexible electronic materials, prepared by taking methane and preparing template using single wall carbon nanotube and nano-copper.

YU M, WU X, LIU J, LI S, XUE X, YANG H

Device for producing graphene, has graphite furnace tube that is uniformly distributed at periphery of reaction chamber, and induction heating ring which is uniformly wound on periphery of graphite furnace pipe for heating furnace tube.

ZHANG H, WANG H, BAI B, ZHANG S, FAN W, YANG H, CHEN Y, ZHU Z, LI H