国家/地区 中国（10） 美国（10） 世界知识产权组织（10） 韩国（8） 欧洲专利局（EPO）（6） 日本（6） 德国（2） 英国（2） 台湾（2）
IPC部 C（14）
IPC大类 C01（14）
IPC小类 C01B（14）
IPC C01B031/04（14）
发明人 JOUVRAY A（2） TEO K B K（2） ZHANG X（2）
公开年 2015（8） 2014（4） 2016（2）
申请年 2014（14）
专利权人 AIXTRON SE（2）

Separating carbon structure including e.g. graphene and carbon nanotube deposited on seed structure, comprises e.g. providing carbon structure into processing chamber, heating carbon structure and seed structure, and supplying etching gas.

MATHARU J, THOMAS S, TEO K B K, JOUVRAY A, JOUBEUREI A, MATARU J, TOMASEU S

Method of manufacturing graphene sheet used in flexible touch screen for mobile, involves supplying carbon atoms to volume above liquid, and allowing carbon atoms to settle on surface of liquid, and to coalesce to form graphene sheet.

COLOSIMO N G R, COLOSIMO N

Preparing graphene thin films comprises processing copper foil blank and growing graphene films on copper foil where processing copper foil blank includes e.g. cleaning copper foil blank plasma, decontaminating and treating with oxide layer.

JIN H, LIU Z, QI X, PENG P, YANG H, ZHANG Z, ZHANG W, ZHANG X, DENG K

High electrical and thermal conductivity flexible three-dimensional graphene material comprises multiple three-dimensional graphene tube, three-dimensional graphene cloth and three-dimensional graphene felt.

BI H, HUANG F, ZHANG Y, YU L

Apparatus for separating carbon-containing structures in form of nanotubes or graphene, has plate-shaped component that is arranged in process chamber housing and inserted in retaining recess formed in wall of process chamber housing.

RIPPINGTON D E, JOUVRAY A, RUPESINGHE N L, TEO K, TEO K B K, RUPESINGHE N

Formation of graphene scroll for synthesizing graphene article, involves annealing catalyst substrate in hydrogen gas, exposing substrate to reaction gas mixture, detaching substrate from graphene and consolidating synthesized graphene.

VLASSIOUK I V, IVANOV I N, DATSKOS P G

Forming graphene film comprises placing substrate and carbon source into reaction chamber having gas inlet, and heating carbon source under flow of hydrocarbon-free gas to convert portion of carbon source into graphene film on the substrate.

DIJON J, TYURNINA A

Manufacture of monocrystal graphene film for semiconductor device, involves forming polycrystalline graphene on substrate using hydrocarbon gas, growing graphene film, forming catalyst, heating and recrystallizing.

HWANG C, HWANG C Y

Preparing graphene transparent thin film comprises placing stainless steel metal substrate in vacuum heat treatment furnace, then dropping kerosene, cooling mixture in furnace, and coating acrylic acid polymer on the surface of substrate.

CHEN L, ZHANG C

Preparing graphene, comprises e.g. placing sheet-type metal substrate in a reaction chamber, contacting with carbon source material, and irradiating one side surface of sheet-type metal substrate by using laser beam, and irradiating again.

GAO J, LI B, JIANG J, LIU R, TENG Y, WANG Q