国家/地区 美国（27） 世界知识产权组织（23） 中国（19） 韩国（17） 日本（16） 欧洲专利局（EPO）（12） 台湾（7） 英国（6） 澳大利亚（3） 加拿大（2） 波兰（2）
IPC部 C（48）
IPC大类 C01（48）
IPC小类 C01B（48）
IPC C01B032/186（48）
发明人 DIXON S（3） GUINEY I（3） WANG H（3）
XIE X（3） DING G（2） HE X（2）
HONG B H（2） LIU X（2） SONG Z（2）
THOMAS S（2） WANG X（2） XIE H（2）
ZHANG Q（2）
公开年 2021（11） 2022（7） 2023（6） 2017（5） 2015（4） 2016（3） 2019（3） 2011（2） 2012（2） 2013（2） 2014（2）
申请年 2021（11）  2020（7）  2022（6）  2016（5）  2012（4）  2015（4）  2014（3）  2013（2）  2019（2） 
专利权人 PARAGRAF LTD（3） SHANGHAI INS.（3） GRAPHENE SQU.（2） UNIV HANYANG.（2）
UNIV SEOUL N.（2） UNIV SUNGKYU.（2）

System for realizing formation of high throughput and high yield graphene for use in applications such as batteries, ultra-capacitors and fuel-cells, has gas distribution subsystem for dispensing annealing gas composition to inner side of processing sub-enclosure.

PHILPOTT R, BARAKET M, SHERRILL V

Preparing graphene crystal using plasma enhanced chemical vapor deposition device involves placing insulating substrate in synthesis chamber, pumping synthesis chamber to vacuum, introducing growth gas, generating plasma and transversely growing graphene small crystal nucleus on insulating substrate.

MA S, LIU B

Improving quality of metal catalytic thin layer prepared by sputtering comprises cleaning Si/SiO2 substrate, photoetching the pattern, sputtering a layer of metal thin layer with the graphene of catalyzing and growing on the substrate sheet by using the sputtering table, peeling and etching.

ZHAO Y, YU X, LIU Z, NIE X, SONG Z, DENG J, HE X

Growing graphene layer structure on substrate used in opto-electronic device, e.g., solar cell, solar cell, light-emitting diode, organic light-emitting diode, electro-optic modulator, photodetector or diode, involves providing substrate on susceptor in chemical vapor deposition reaction chamber.

THOMAS S, GUINEY I, DIXON S

Producing multilayer graphene, involves synthesizing multilayer graphene from carbon source using iron-chromium alloy film as catalyst.

HAYASHI K, KONDO O

Electrical connection component for e.g. electric contact, comprises base material and nanocarbon material film composed of graphene laminated material formed by laminating two layers of graphene single layer materials.

KITANO A, SHIMIZU T, KUBO T

Growing graphene nanoribbon involves depositing aromatic molecular seeds from gas phase onto surface of growth substrate, and growing graphene nanoribbon from aromatic molecular seeds via chemical vapor deposition, where growth substrate is germanium substrate.

JACOBBERGER R M, WAY A J, ARNOLD M S

Metal-graphene composite comprises metal layer and graphene layer provided by growing directly on one surface of metal layer, where graphene layer contains two and/or more graphene thin, metal layer is copper, nickel, cobalt, iron, manganese, chromium, vanadium, titanium, platinum, gold and aluminum.

KIM D J, HONG B H, WOO Y S, KIM D, YU Y S

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Forming a graphene layer structure used in Hall effect sensor, involves providing growth substrate having growth surface, and forming graphene layer structure on growth surface by chemical vapor deposition method, where growth surface is formed of material consisting of e.g. magnesium aluminate.

GRIFFIN R M, THOMAS S, GUINEY I, DIXON S