国家/地区 日本（107）
IPC部 C（107）
IPC大类 C01（107） C23（67） H01（57）
B82（36） B01（23） B32（16）
C30（16） G01（10） H05（9）
B05（5） C22（5） G03（5）
A61（4） C25（4） B21（3）
IPC小类 C01B（107）
IPC C01B032/186（107）
发明人 MATSUMOTO T（13） IFUKU R（10） TAKASHI M（5）
WADA M（5） KABUKI N（4） RYOTA I（4）
SHIN H J（4） BEDWORTH P V（3） BYUN K（3）
CHIBA G（3） CHIBA Y（3） KUBO T（3）
MIYAZAKI H（3） SHIN H（3） SONG H J（3）
公开年 2021（21） 2015（14） 2022（13） 2017（12） 2012（8） 2018（8） 2016（7） 2020（7） 2013（5） 2011（3） 2014（3） 2019（2） 2023（2）
申请年 2014（13）  2021（13）  2019（11）  2020（11）  2016（10）  2015（9）  2017（9）  2012（6）  2018（6）  2022（6）  2013（5）  2011（4）  2010（3） 
专利权人 TOKYO ELECTR.（14） NAT INST ADV.（8） SAMSUNG ELEC.（6） FUJITSU LTD（5）
YAZAKI CORP（5） JX NIPPON MI.（3） LOCKHEED MAR.（3） NIPPON MININ.（3）
NIPPON MININ.（3） SHANGHAI INS.（3） TOSHIBA KK（3） UNIV CALIFOR.（3）
AIXTRON SE（2） APPLIED GRAP.（2） CORNING INC（2） GRAPHENE SQU.（2）
HEIQ MATERIA.（2） LAM RES CORP（2） LOCKHEED COR.（2） SHINETSU CHE.（2）

Producing multilayer graphene, involves synthesizing multilayer graphene from carbon source using iron-chromium alloy film as catalyst.

HAYASHI K, KONDO O

Electrical connection component for e.g. electric contact, comprises base material and nanocarbon material film composed of graphene laminated material formed by laminating two layers of graphene single layer materials.

KITANO A, SHIMIZU T, KUBO T

Producing multilayer graphene involves recrystallizing catalyst film by performing heat treatment of heating catalyst film containing iron and nickel in atmosphere containing hydrogen, and another atmosphere containing hydrogen and hydrocarbons to form stacked graphenes.

HAYASHI K

Film forming method by loading substrate into processing container, forming graphene film on substrate with plasma of process gas comprising carbon-containing gas, forming doped graphene film on substrate and/or graphene film with plasma of process gas comprising dopant gas.

YAMADA H, IFUKU R, MATSUMOTO T, KABUKI N

Substrate processing includes taking substrate into processing vessel, removing oxygen-containing layer on substrate using plasma of gas mixture including hydrogen-containing gas, and forming nucleation layer and graphene film on substrate using plasma of gas mixture including carbon-containing gas.

IFUKU R, MATSUMOTO T, WADA M, KABUKI N

Metal-graphene composite comprises metal layer and graphene layer provided by growing directly on one surface of metal layer, where graphene layer contains two and/or more graphene thin, metal layer is copper, nickel, cobalt, iron, manganese, chromium, vanadium, titanium, platinum, gold and aluminum.

KIM D J, HONG B H, WOO Y S, KIM D, YU Y S

Graphene laminate comprises substrate having insulating surface, intermediate layer located on and in contact with substrate, and graphene film located on intermediate layer and in contact with intermediate layer.

OKIGAWA Y, YAMADA T

Optical element comprises substrate, multilayer graphene provided on substrate, electrode connected to multilayer graphene, and another electrode connected to multilayer graphene.

KONDO O

Ultra-high specific surface area carbon material for e.g. electrode material, comprises graphene structure having two-dimensional or three-dimensional periodic rule structure, reflecting shape of pore of zeolite, where carbon material comprises metal atom to be bonded to graphene edge through oxygen.

TORII A

Processing substrate by loading substrate into processing container, forming carbon film on substrate with plasma of mixed gas containing carbon-containing gas while inside of processing container is maintained at pressure, and changing inside of processing container.

WADA M, IFUKU R, MATSUMOTO T, YAMADA H, TAKASHI M