国家/地区 中国（6）
IPC部 C（7）
IPC大类 C01（7）
IPC小类 C01B（7）
IPC C01B032/188（7）
发明人
公开年 2020（7）
申请年 2019（4）  2020（3） 
专利权人

Preparing graphene film useful in electronic devices, comprises adjusting catalyst on silicon carbide substrate, heating obtained reaction sample, dissolving the silicon atoms contained in silicon carbide substrate and post treating.

ZHU H, WU T, CHEN J, ZHANG C, SHI Z, YU G

Preparation of silicon carbide graphene substrate epitaxial material by growing silicon carbide base layer, growing silicon carbide-graphene layer and preparing special device to process silicon carbide-graphene composite layer.

Laminate used for electronic device, comprises graphene film and base portion comprising silicon carbide, and has ion mass distribution in stack depth direction obtained by using bismuth ions as primary ions and cesium ions as sputter ions.

MITSUHASHI F, TATENO Y, ADACHI M, YAMAMOTO Y

Preparing graphene semiconductor useful for manufacturing device, comprises e.g. flattening surface of silicon carbide substrate, heating, subliming and desorbing silicon from carbon atomd and depositing semiconductor material particles.

LV Z, LI J, SI C

Gas detection device based on silicon carbide graphene material, has matrix contact metal layer plated on graphene layer of composite silicon carbide graphene material, and zinc oxide particle layer coated on metal layer.

INVENTOR U

Preparing epitaxial graphene, by putting silicon carbide substrate into deposition chamber of laser chemical vapor deposition equipment, turning on laser to irradiate substrate and adjusting laser power to reduce substrate temperature.

TU R, ZHANG S, ZHANG L

Preparing single-layer graphene comprises taking single crystal silicon carbide substrate, heating, annealing and inserting metal in atoms under buffer layer.

HUI X, HU T, YANG D, MA F, MA D, XU K