国家/地区 韩国（24） 美国（19） 世界知识产权组织（16） 中国（9） 日本（9） 欧洲专利局（EPO）（3）
IPC部 C（39）
IPC大类 C01（39）
IPC小类 C01B（39）
IPC C01B031/02（39）
发明人 JUNG M（3） MOON J（3） CHIBA Y（2）
CHOI J（2） CHOI M（2） HAYASHI K（2）
JUNG Y（2） JUNG Y G（2） KIM J K（2）
KIM J S（2） KIM T（2） KIM T H（2）
KIM Y（2） TSUKAHARA N（2） YOO H J（2）
公开年 2014（39）
申请年 2013（20）  2012（13）  2014（6） 
专利权人 LG ELECTRONI.（3） SAMSUNG ELEC.（3） SAMSUNG TECH.（3） DOKURITSU GY.（2）
GRAPHENE SQU.（2） HANWHA AEROS.（2） HANWHA TECHW.（2） JX NIPPON MI.（2）
NIPPON MININ.（2） POSCO（2） SNU R DB FO.（2） ULVAC INC（2）
UNIV SUNGKYU.（2）

Manufacture of graphene for electric component, involves forming metal catalytic layer on substrate, introducing cover material on catalytic layer, and growing graphene on catalytic layer by carrying out chemical vapor deposition.

CHO K, BONG H, CHO K W

Manufacture of graphene as base material for electronic circuits, carbon-based electronic device and electromagnetic device, involves forming metal layer on thermal expansion compensation substrate, and forming graphene on metal layer.

CHOI M, KIM T, MOON J, JUNG M, KIM T H

Graphene useful as an electrode in an electronic device, processed via ion beam treatment method.

KIM S Y, KWON K C

Production of graphene for wiring film of three-dimensional stacked memory, involves decomposing carbon-containing gas with low reactivity in space which opposes substrate, and decomposing carbon-containing gas with high reactivity.

KAGAYA M, MATSUMOTO T, NISHIDE D

Synthesis of graphene involves coating anti-corrosive material to surface of catalyst metal foil, placing catalyst metal foil coated with anti-corrosive material in chemical vapor deposition chamber and creating vacuum in chamber.

WON D K, KIM N Y

Apparatus for manufacturing graphene comprises a first chamber for supplying a carbon source under a first condition, a second chamber for supplying a carbon source, and a feeder for continuously supplying a catalyst metal.

MOON J, CHOI M, JUNG M

Graphene growth method involves sequentially forming conductor layer, insulating layer, carbon layer and semiconductor layer, applying voltage between semiconductor layer and conductive layer, heating, and growing carbon layer.

CHOI J W

Board for forming graphene layer, comprises board layer; metal catalyst layer disposed on the board layer and functioning as a catalyst for forming the graphene layer; and stress reduction layer to reduce stress of the metal catalyst layer.

CHO B J, MUN J H

Graphene wiring for semiconductor device comprises substrate, catalyst layer on substrate, graphene layer on catalyst layer, and dopant layer which contains atom or molecule in side surface of graphene layer.

MIYAZAKI H, SAKAI T, KATAGIRI M, YAMAZAKI Y, SAKUMA H, SUZUKI M, SAKUMA N

Making multiwalled carbon nanotube used in circuit of conductive tip device, by depositing nanoplot made of catalyst material on substrate, and growing nanotube and graphene plane at apex of nanotube by depositing carbon in vapor phase.

LEGAGNEUX P, GANGLOFF L, MAZELLIER J P, ANDRIANIAZY F, COJOCARU C, MAURICE J L, MAZELLIER J, COJOCARU C S, MAURICE J