国家/地区 中国（4） 美国（4） 韩国（3） 日本（2）
IPC部 C（8）
IPC大类 C01（8）
IPC小类 C01B（8）
IPC C23C016/02（8）
发明人 SHIN H（3） BYUN K（2） BYUN K E（2）
KIM C（2） LEE C（2） LEE C S（2）
LEE E（2） SHIN H J（2） SHIN K（2）
SHIN K W（2） SONG H（2） SONG H J（2）
公开年 2020（8）
申请年 2020（4）  2019（3） 
专利权人 SAMSUNG ELEC.（3）

Preparing high-conductivity graphene/copper composite wire, comprises electrochemically polishing copper wire, performing coil chemical vapor deposition, and doping using carbon source, reducing gas source and doping source.

LIU Y, YAO S, GUO C, FAN T

Formation of graphene for metal wiring for semiconductor device, involves directly growing graphene on non-catalyst substrate based on injecting reaction gas comprising carbon source having preset ionization energy, into reaction chamber.

SONG H, LEE E, LEE C, KIM C, BYUN K, SHIN K, SHIN H, SONG H J, LEE C S, BYUN K E, SHIN K W, SHIN H J

Crystalline graphene used in display device, is obtained by performing thermal treatment involving supplying heat to inorganic substrate, introducing vapor carbon supply, and binding activated carbon to grow crystalline graphene.

SHIN H, CHOI J, WOO Y, YOON S

Forming graphene structure by preparing to-be-processed substrate, pre-processing by supplying gas containing carbon containing gas to to-be-processed substrate, and forming a graphene structure on surface of to-be-processed substrate.

IFUKU R, MATSUMOTO T, SUGIURA M, RYOTA I, TAKASHI M, MASAHITO S

Synthesizing single-layer graphene on surface of single crystal iron for preparing spin device, involves placing single crystal iron, iron sample with clean surface in vacuum environment containing hydrocarbon gas.

HONG Z, LI R, YOU L

Synthesizing graphene pattern by physically adhering catalyst block including catalyst material to portion of growth substrate, and forming graphene thin film selectively at interface between catalyst block and growth substrate.

PARK J, SIM Y, KIM J, SIM Y M, PARKJAEHYUN

Method of forming graphene on substrate, involves treating surface of substrate placed in reaction chamber with plasma, and growing graphene on surface of substrate by plasma enhanced chemical vapor deposition (PECVD).

SHIN K, KIM C, YAMAMOTO K, LEE C, SONG H, LEE E, BYUN K, SHIN H, AN S, SHEN J, JIN C, SHAN B, LI C, SONG X, LI Y, BIAN Q, SHEN X, AN X, SHIN K W, LEE C S, SONG H J, BYUN K E, SHIN H J, AHN S J

Preparation of graphene-reinforced metal-based foam framework structure composite material involves immersing cleaned copper foam in mixed solution containing e.g. sodium hydroxide, calcining, performing graphene deposition, and cooling.

INVENTOR U