国家/地区 中国（11） 美国（11） 韩国（10） 世界知识产权组织（5） 日本（3） 台湾（3） 欧洲专利局（EPO）（2）
IPC部 C（25）
IPC大类 C01（25）
IPC小类 C01B（25）
IPC C23C016/26（25）
发明人 LIU P（3） CHEN J（2） CHEN X（2）
DONG Y（2） IFUKU R（2） LI X（2）
MATSUMOTO T（2） YE Y（2） ZHANG Y（2）
公开年 2018（25）
申请年 2017（12）  2018（8）  2016（5） 
专利权人 TOKYO ELECTR.（2）

Synthesis of graphene for optoelectronic devices, involves placing copper-nickel thin film laminate in chemical vapor deposition, bringing graphene precursor into contact with thin film laminate, and performing chemical vapor deposition.

CHO K, YOO M S, LEE H C, CHO K W

Method for manufacturing graphene, involves forming graphene layer on graphene growth substrate, and forming pattern for formation of graphene on graphene growth substrate.

KIM H K, KIM H

Method for generating graphene film, involves placing substrate for graphene film synthesis inside of quasi-enclosed substrate holder and generating graphene film on substrate through chemical vapor deposition.

BOL A A, LI X

Direct growing method for large area graphene on oxide insulating substrate involves spin coating layer of polymethyl methacrylate (PMMA) film as an etching support layer after finishing growth of layer of graphene film on metal surface.

XU C, SUN J, DONG Y, XIE Y, PAN G, WANG Q, QIAN F

Graphene-manufacturing apparatus includes reaction chamber defining reaction space, mold unit including mold body and outer surface, and driving unit connected to mold unit.

HUANG K, HUANG G

Wiring for semiconductor device, includes first metal portion, multilayer graphene, and second metal portion which are interposed between conductive portions.

KATAGIRI M, SAITO T, SAKAI T, MIYAZAKI H

Continuous permeable graphene film comprises at least two layers of graphene and nanochannels or nanopores providing a fluid passage from one face of the film to the other.

SEO D H, PINEDA S, MURDOCK A, HAN Z J, OSTRIKOV K, XIE M, VAN DER LAAN T

Method for doping synthesized graphene by high temperature heat treatment in gas atmosphere containing dopant,.

HAM M H, SON M W, MYUNGWOO S

In situ preparation of electroless graphene thin film useful in flexible electronic device, comprises e.g. forming titanium catalyst layer by sputtering on substrate, and performing In-situ plasma assisted chemical vapor deposition.

YOON S G, PARK B J

Producing graphene fiber composite useful in electronic device and electric wire, comprises e.g. performing chemical vapor deposition process to synthesize graphene layer on metal catalyst, and etching metal catalyst from graphene layer.

BAE S, KIM S J, RHO H K, LEE S K, KIM T W, LEE D S, LEE S H