国家/地区 美国（7） 中国（5） 世界知识产权组织（5） 欧洲专利局（EPO）（4） 日本（3） 韩国（3） 台湾（2）
IPC部 C（8）
IPC大类 C01（8）
IPC小类 C01B（8）
IPC C23C016/44（8）
发明人
公开年 2015（8）
申请年 2014（4）  2015（3） 
专利权人

Preparing graphene films involve using graphene oxide, where obtained graphene oxide is filtered in vacuum suction filtration.

BI H, HUANG F, ZHOU M

Production of two-dimensional nanomaterial e.g. graphene used in electronic device, involves forming two-dimensional nanomaterial on liquid surface containing molten eutectic compound, of substrate by chemical vapor deposition.

BABENKO V, GROBERT N

Apparatus for separating carbon-containing structures in form of nanotubes or graphene, has plate-shaped component that is arranged in process chamber housing and inserted in retaining recess formed in wall of process chamber housing.

RIPPINGTON D E, JOUVRAY A, RUPESINGHE N L, TEO K, TEO K B K, RUPESINGHE N

Making graphene used as an impenetrable gas barrier, comprises providing seed gas in presence of metallic substrate, providing pulsed, ultraviolet laser beam and moving substrate or laser beam relative to other.

CASTRO A H, OZYILMAZ B, STIER A V, TOH C T, DU Z, CASTRO N A H

Hybrid film used in transparent conductive film application, has nanostructures that are formed on substrate, and graphene domains that are provided on substrate and nanostructures and are integrally connected to nanostructures.

GONG K

Substrate for graphene growth, has glass-ceramic body, and multiple metallic islands that is disposed on surface of glass-ceramic body.

BORRELLI N F, FEKETY C R, LIU X, SONG Z

Composition, used in a phase change material which is useful e.g. as thermal conductivity substrate for flexible graphene electronic devices, as electrode in battery, and in a thermal storage device, comprises galactitol and mannitol.

DA SILVA A K, FLEMING E, SHI L, BIELAWSKI C W, RUOFF R S, WEN S, JI H, PETTES M, PAUL A, PAEK E, PAK A J, SELLAN D P, FLAMING E, DA SILVAA A K

Formation of graphene-boron nitride interface used in e.g. formation of graphene-boron nitride heterostructure, involves exposing ruthenium substrate to ethylene, and sequentially exposing resultant substrate to oxygen and borazine.

SUTTER P W, SUTTER E A