国家/地区 中国（6） 美国（3） 台湾（2）
IPC部 C（7）
IPC大类 C01（7）
IPC小类 C01B（7）
IPC C01B031/04（7）
发明人
公开年 2016（3） 2014（2） 2015（2）
申请年 2014（7）
专利权人

Separating carbon structure including e.g. graphene and carbon nanotube deposited on seed structure, comprises e.g. providing carbon structure into processing chamber, heating carbon structure and seed structure, and supplying etching gas.

MATHARU J, THOMAS S, TEO K B K, JOUVRAY A, JOUBEUREI A, MATARU J, TOMASEU S

Manufacturing method of graphene-copper-graphene heterogeneous film, involves annealing copper of sample with same heating and cooling as single-layer graphene (SLG) SLG synthesis, without methane addition.

LAI C P

Carbon fiber film comprises carbon nanotube film containing carbon nanotubes joined end to end and extending along a same direction in which each carbon nanotube is joined with graphene sheets.

JIANG K, WANG J, FAN S, LIN X, LIU P

Selection of qualified region of chemical vapor deposited graphene film during fabrication of microelectronics, involves heating chemical vapor deposited graphene film formed on metal substrate using reaction gas, and removing defect.

CHEN Z, LI X, SUI Y, WANG B, ZHANG H, ZHANG Y, YU G

Growing nanostructured single layer graphene film involves selecting copper foil and then annealing selected material with graphene under mixed atmosphere of argon and hydrogen high temperature.

DONG J, HE H, LI K, WANG H, ZENG X

Transfer method of graphene film involves depositing graphene thin film on metal substrate by chemical vapor deposition method, bonding transfer substrate using heat-peelable adhesive, and etching metal substrate.

YANG J, LI H, TAN H, WANG W, QIU Y

Silicon dioxide substrate based graphene transparent conductive film manufacturing method, involves forming graphene transparent conductive film on upper part of metal substrate to form substrate, and etching metal substrate.

SHI Y