国家/地区 中国（30） 美国（14） 韩国（9） 世界知识产权组织（9） 日本（5） 欧洲专利局（EPO）（3） 印度（3）
IPC部 C（54）
IPC大类 C01（54）
IPC小类 C01B（54）
IPC C01B032/186（35） C23C016/26（35） C01B032/194（11）
B82Y030/00（8） B82Y040/00（8） C23C016/02（8）
C01B032/184（7） C23C016/56（7） C01B032/182（5）
C23C016/44（5） H01L021/02（5） C01B032/198（4）
C23C014/18（4） C23C016/50（4） C23C016/511（4）
发明人 SHIN H（5） BYUN K（4） BYUN K E（4）
SHIN H J（4） SHIN K（4） SHIN K W（4）
KIM C（3） LEE C（3） LEE C S（3）
LI X（3） SONG H（3） SONG H J（3）
ZHANG Q（3） AHN S J（2） AN S（2）
公开年 2020（54）
申请年 2019（25）  2020（23）  2018（6） 
专利权人 SAMSUNG ELEC.（5） KOREA INST S.（2） SIZU TECHNO .（2） TOKYO ELECTR.（2）
UNIV TIANJIN.（2） UNIV YANGZHO.（2）

Substrate used for preparing high-quality graphene, is made of iron-cobalt-nickel-copper alloy, and has thickness and surface roughness below preset value.

CAO N, LIU P, ZANG X, CAI K, WANG G, LI G

Microball complex useful in cathode of lithium secondary battery comprises microballs having three-dimensional carbon nanotube matrix structure, graphene and silicon nanoparticles, and carbon coating layer.

YANG C M, JO A, KIM S Y, RYU J S, LEE M W, MINGOOK K, NA W

Immersion spray etching comprises covering side of graphene-grown substrate with graphene film that needs to be retained with protective film, adding to flowing etching solution to etch substrate to form protective film/graphene.

LI T, LIU H, MAO D, ZHANG J

Preparing high-conductivity graphene/copper composite wire, comprises electrochemically polishing copper wire, performing coil chemical vapor deposition, and doping using carbon source, reducing gas source and doping source.

LIU Y, YAO S, GUO C, FAN T

Functionalized titanium dioxide/chlorella nano composite material based on graphene quantum dot useful in n-butyraldehydegas sensor comprises e.g. titanium dioxide nano grain, functionalized graphene quantum dot and carbonized chlorella.

SHAO S, LIN J, XIA Y, LIU X

Providing hydroxylzing graphene, comprises depositing, predefined quantity of graphene on metal foil of predefined thickness, performing, poly(methyl methacrylate) spin coating of graphene to coated graphene and performing, etching of foil.

SINGLA R, KOTTANTHARAYIL A

Formation of graphene for metal wiring for semiconductor device, involves directly growing graphene on non-catalyst substrate based on injecting reaction gas comprising carbon source having preset ionization energy, into reaction chamber.

SONG H, LEE E, LEE C, KIM C, BYUN K, SHIN K, SHIN H, SONG H J, LEE C S, BYUN K E, SHIN K W, SHIN H J

Preparing molybdenum disulfide/graphene two-dimensional material hetero junction visible light catalyst, comprises e.g. preparing single layer uniform graphene on surface of copper foil, and growing molybdenum disulfide on graphene surface.

CHENG L, ZHENG H, XU W, WANG S

Device used for producing graphene includes main heating unit, auxiliary heating unit, air supply unit, pressure reducing component, bottom plate, containing space, heating space and cavity body.

ZHANG J

Multifunctional surface modifying useful for improving corrosion resistance and biocompatibility of magnesium alloy comprises e.g. preparing of chitosan functionalized graphene oxide and self-assembly surface modifying of magnesium alloy.

PAN C, QIAO X, ZHANG Z, CHANG K, CHEN L, YANG Z