国家/地区 台湾（12）
IPC部 C（12）
IPC大类 C01（12）
IPC小类 C01B（12）
IPC C01B031/04（10） C01B031/02（8） B82Y030/00（7）
B82Y040/00（7） B21B001/40（4） C22C009/00（4）
C22C009/02（4） C22F001/08（4） C23C016/26（4）
B21B003/00（3） C01B032/186（3） C22F001/00（3）
B05D005/12（2） B21B027/02（2） C22F001/02（2）
发明人 CHIBA G（4） CHIBA Y（4） FAN S（3）
YOSHIHIRO C（3） CHIBA YOSHIHIRO（2） JIANG K（2）
LIN X（2）
公开年 2013（9） 2012（3）
申请年 2012（12）
专利权人 JX NIPPON MI.（4） NIPPON MININ.（4） NIPPON MININ.（4） HON HAI PREC.（3）
HONGFUJIN PR.（3） UNIV TSINGHU.（3） NIPPON MININ.（2）

Composite structure, useful for a transparent electrode in display panels of mobile phones and tablet personal computers, comprises nanofiber substrate, graphene layer disposed on a surface of a net structure and organic compound.

MA C M, HUANG Y, YANG S, TIEN H, MA M C, WANG N

Method for manufacturing epitaxial structure of e.g. LED, involves forming graphene layer on epitaxial growth surface, and epitaxially growing epitaxial layer on epitaxial growth surface.

WEI Y, FAN S, GI Y, FAN F Y

Making strip shaped graphene layer used as conductive layer in semiconductive device, comprises making drawn carbon nanotube film, disposing carbon nanotube composite, removing polymer material and etching nanotube segment and graphene film.

LIN X, JIANG K, FAN S

Making strip shaped graphene layer used in semiconductor devices e.g. sensor, involves providing carbon nanotube structure comprising film on substrate surface, implanting carbon ions into substrate, and annealing substrate to obtain layer.

LIN X, JIANG K, FAN S

Manufacturing electrical conductor, comprises providing substrate layer, depositing surface layer on substrate layer, and depositing graphene layer on substrate layer.

SULLIVAN M M E, HILTY R D, MARTENS R I, ZHENG M, HEMOND J H B, LIU Z, SULLIVAN MALERVY M E, SULLIVAN MALERVY M, HILTY R, MARTENS R, HEMOND J, SULLIVANMALERVY M E

Method for forming e.g. multi-layered graphene layer deposited on glass substrate, involves utilizing microwave with electron cyclotron resonance mechanism to excite carbon-containing gas to deposit graphene layer on substrate.

HUANG K, CHANG C, HSIEH Y, CHIU P, MEDINA H, QIU B, XIE Y, ZHANG Z, MEDIONA H, HUANG K P, CHANG C C, HSIEH Y T, CHIU P W

Copper foil used for manufacturing graphene, comprises copper with specific purity.

CHIBA Y, ONO T, CHIBA G

Pre-processing method of catalyst metal layer during formation of graphene, involves activating catalyst metal layer by applying plasma of process gas containing reducible gas and nitrogen-containing gas to catalyst metal layer.

MATSUMOTO TAKASHI, MATSUMOTO T

Copper foil for manufacturing graphene, has specified arithmetic mean roughness in rolling parallel direction and rolling perpendicular direction.

CHIBA YOSHIHIRO, CHIBA Y, CHIBA G, YOSHIHIRO C

Copper foil for manufacturing graphene, has specified sum total of oxides and sulfides having diameter of below preset value before heating under hydrogen and argon-containing atmosphere.

CHIBA Y, YAMAJI T, YOSHIHIRO C, TATSUYA Y, CHIBA G