国家/地区 韩国（33）
IPC部 C（33）
IPC大类 C01（33） H01（31） C23（7）
B01（4） H05（4） C09（2）
G03（2）
IPC小类 C01B（33）
IPC H01M004/02（10） H01M004/62（9） C01B032/194（8）
H01M010/052（8） C01B032/182（7） C01B032/186（7）
H01M004/36（7） C23C016/26（6） H01L021/02（6）
H01L021/768（6） H01M004/38（6） C01B032/05（5）
H01M004/587（5） H01M010/0525（5） C01B032/184（4）
发明人 SHIN K（5） LEE C（4） LEE C S（4）
SHIN K W（4） BYUN K（3） BYUN K E（3）
KIM S（3） KIM Y（3） SHIN H（3）
SHIN H J（3） HE X（2） HUH S（2）
HYUN J S（2） KIM H（2） KIM H G（2）
公开年 2023（19） 2022（14）
申请年 2022（33）
专利权人 SAMSUNG ELEC.（7） BTR NEW MATE.（2） DINGYUAN NEW.（2） HUIZHOU DING.（2）
LG ENERGY SO.（2） RUMPLIER INC（2） TOKYO ELECTR.（2） UNIV SEOUL N.（2）
UNIV ULSAN F.（2）

Conductive material slurry used in secondary battery for electric vehicles, comprises conductive material, and dispersing agent dispersing conductive material.

HAN J, HUH C, YANG H C, LEE J, KIM H, KYUNG H, CHUL H, LEEJOOCHUL, CHUL K

Porous carbon material used in positive electrode for lithium-sulfur battery, has specific surface area and impurities removed through pretreatment using microwaves.

SONG M, PARK I, CHOI R, LEE H, KIM Y, PARK S, YANG S, MYUNGJUN S, PARK I T, KIM Y H

Porous silicon-carbon composite used as anode active material for lithium secondary battery, comprises core-shell structure containing silicon particles and carbon, core including silicon particles, and shell including carbon layers.

LEE J H, LIM S W, PARK H J, NAM S J, LIM H H, LIM J C, HYUN L J, IMSUNGWOO, PARK H, JIN N, HEE L, LIM J

Hard mask film used in etching process for manufacturing semiconductor device, comprises first graphene layer, first amorphous carbon layer on first graphene layer, second graphene layer on first amorphous carbon layer, and second amorphous carbon layer on second graphene layer.

KIM Y, OH S, AN S, AHN S J, OH S R, KIM Y U, AN X

Saturable absorber device for adjusting saturation threshold comprises optical waveguide and saturable absorber structure in which more than one-unit structures are arranged at predetermined intervals on one side of optical waveguide.

HEO D C, BAE Y M, SEOL S K, PYO J Y

Preparing reduced acylated graphene oxide used in electrode active material of lithium secondary battery, involves subjecting graphene oxide to acylation reaction to prepare acylated graphene oxide, and reducing the acylated graphene oxide.

KIM D H, PARK S, YEON S, SHIN K, JIN C, HWANG S H, SEUNGHAE H, JIN C S, HEE S K

Modification of graphene separator used for electrochemical device, involves mixing graphene powder with aqueous binder and solvent to form aqueous graphene dispersion, coating graphene dispersion to form graphene coating film, and forming graphene coating layer.

HYEON C, KIM J, HWAN K K, KIM J H, KI M K

Manufacture of thin film used for field effect transistor, involves providing graphene layer on one surface of substrate, functionalizing other surface opposite to one surface of substrate using reactant, depositing thin film on functionalized graphene layer, and separating thin film by heating.

LEE G H, RYU H J, RYU H

Interconnect structure for electronic device, comprises first dielectric layer including trench, conductive wire filling inside of trench, first cap layer on top surface of conductive wire, first cap layer including doped graphene, and doped graphene being graphene doped with group fifth element.

JUNG A, KIM S, SHIN K, SHIN K W, KIM S T, JUNG A R

Semiconductor device comprises interconnection structure comprises seed layer disposed on first conductive layer, seed layer including graphene; and metal migration barrier layer disposed on seed layer, metal migration barrier layer including MXene.

HAN J H, KOO W T, HAN Z, KOO W, TAE K W