国家/地区 日本（9）
IPC部 B（9）
IPC大类 B23（9）
IPC小类 C01B（9）
IPC C01B031/04（6） C01B031/02（5） B23K026/00（3）
C23C016/26（3） B23K020/00（2） B23K026/08（2）
B23K026/14（2） B23K026/18（2） B23K026/60（2）
B23K026/70（2） B82Y030/00（2） B82Y040/00（2）
C01B032/182（2） C01B032/194（2） C01B032/21（2）
发明人 FURUKAWA K（2） HIBINO H（2） IKEGAMI H（2）
TAKAMURA M（2）
公开年 2015（3）
申请年 2011（2）  2013（2） 
专利权人 NIPPON TELEG.（2） UNIV KYUSHU（2）

Copper/graphene junction for e.g. engine compartment, comprises structure in which copper component and graphene-containing carbonaceous component are joined, active metal carbide layer, and magnesium solid solution layer in which magnesium is solid-solved in matrix phase of copper.

NOBUYUKI T, TERASAKI N

Method for transferring graphene sheet from copper substrate to functional substrate, involves submerging functional substrate in floating bath, and decreasing fluid level of floating bath to lower graphene sheet onto substrate.

HEISE S E, BEDWORTH P V, SWETT J L, SINTON S W

Preparation of graphene material used for component of electronic device e.g. energy storage device and energy generation device, involves exposing polymer to laser source and forming graphene.

KITTRELL C, LIN J, PENG Z, TOUR J M, HAYASHI K

Processing method for processing apparatus of graphene involves irradiating pulse laser to desired process location of graphene and removing graphene on desired location.

FURUKAWA K, TAKAMURA M, HIBINO H, IKEGAMI H

Processing apparatus for forming pattern of graphene thin film, has light source that irradiates light to process location of graphene for reflectance measurement, and measurement unit that measures reflectance of light in location.

FURUKAWA K, TAKAMURA M, HIBINO H, IKEGAMI H

Lead-free soldering for gas sensors, conductive or transparent thin films, and spin injection device contains graphene or graphite.

FUJII K, OGIMOTO Y, SHIOKAWA K

Fabricating structure comprising graphene sheet equipped with metal pads, comprises synthesizing graphene sheet on many metal pads that are laid on membrane of dielectric material, and optionally eliminating the membrane.

ZENASNI A, CORAUX J, IVANOVAHRISTOVA V, LANDIS S, PERNEL C

Fabricating graphene to fabricate FET, comprises forming alloy catalyst layer on substrate using sputtering method and/or evaporation method, and forming graphene layer on alloy catalyst layer by supplying hydrocarbon gas onto substrate.

WOO Y, SEO D, SEO S, CHUNG H, KANG S, HEO J, SEO S A, CHUNG H J, KANG S R, HEO J S, WOO Y S, JUNG H J, HUH J S, YEO R, XU D, HUH J, JUNG H

Semiconductor device for liquid crystal display, includes transparent substrate having graphene film, graphite film, or amorphous carbon film such that carbon film is transferred to substrate from carbon material substrate by laser beam.

HIURA H, KANAYAMA T, TADA T