国家/地区 中国（24）
IPC部 C（24）
IPC大类 C01（24）
IPC小类 C01B（24）
IPC C23C016/455（24）
发明人 CHIU P（2） HUANG K（2） JOUVRAY A（2）
LIU Z（2） QIU B（2） TEO K B K（2）
公开年 2021（6） 2013（5） 2016（3） 2017（3） 2015（2）
申请年 2013（4）  2021（4）  2014（3）  2020（3）  2015（2）  2016（2）  2017（2）  2022（2） 
专利权人 AIXTRON SE（2） IND TECHNOLO.（2） UNIV SINGAPO.（2）

Photoanode used for photoelectrochemical decomposition of water and oxygen evolution, comprises base layer, dielectric passivation layer and sandwich composite layer arranged in sequence.

GONG J, XIE G

Plasma enhanced chemical vapor deposition method used in semiconductor structure, comprises turning on radio frequency source of radio frequency system to decompose aromatic hydrocarbon precursor into multiple active radicals at specific frequency to form graphene layer on magnetic layer.

WU Z, NI I, XU Y, HUANG J, WU C, HSU Y, HUANG J Z, HSU Y H

Structure e.g. porous metal-coated structure used for e.g. catalytic application, comprises substrate comprising activated adsorbent material, and metal material deposited on substrate.

PEPIN P, ETHRIDGE K, THOMSON C, HOLBROOK B, ESRIDGE K

Porous silicon-carbon composite material for lithium ion battery, comprises core-shell structure, where inner core is composite of porous carbon, cerium dioxide and graphene component, and shell is doped with oxide compound selected from phosphorus oxide, arsenic oxide and selenium oxide.

CAO J

Directly growing graphene thin film on surface of non-metallic substrate, involves depositing aluminum oxide film on surface of substrate, evaporating copper film on surface of substrate deposited with aluminum oxide film, annealing and growing graphene by chemical vapor deposition.

LOU G, OUYANG Y, WANG W, LIU Z

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A

Preparing graphene film useful in thin film transistor comprises preparing graded porous silica film filled with metal catalyst, depositing graphene on surface of graded porous silicon dioxide film and removing graded porous silica film.

XIA Y, ZHUO E, YU S

Depositing graphene on a metal surface of substrate by providing substrate including metal surface in reaction chamber, flowing hydrocarbon precursors into reaction chamber and toward the substrate, and generating radicals of hydrogen.

VARADARAJAN B N, NARKEVICIUTE I

Device used for producing graphene includes main heating unit, auxiliary heating unit, air supply unit, pressure reducing component, bottom plate, containing space, heating space and cavity body.

ZHANG J

Electrical contact for forming e.g. connector, is produced using material including layer comprising carbon material which is single graphene layer or graphene laminate on base material comprising metal material having preset resistivity.

MORI K, SHIMIZU T