国家/地区 美国（18）
IPC部 C（18）
IPC大类 C01（18）
IPC小类 C01B（18）
IPC C23C016/26（11） C01B032/186（9） C01B032/182（8）
B82Y030/00（7） B82Y040/00（6） C01B032/184（5）
C01B032/194（4） H01L029/16（4） C01B031/04（3）
C23C016/46（3） H01L021/02（3） C01B032/15（2）
C01B032/18（2） C01B032/198（2） C01B032/205（2）
发明人 LI X（2） LIN Y（2） LIU P（2）
公开年 2018（18）
申请年 2017（10）  2018（5）  2016（3） 
专利权人

Synthesis of graphene for optoelectronic devices, involves placing copper-nickel thin film laminate in chemical vapor deposition, bringing graphene precursor into contact with thin film laminate, and performing chemical vapor deposition.

CHO K, YOO M S, LEE H C, CHO K W

Method for generating graphene film, involves placing substrate for graphene film synthesis inside of quasi-enclosed substrate holder and generating graphene film on substrate through chemical vapor deposition.

BOL A A, LI X

Graphene-manufacturing apparatus includes reaction chamber defining reaction space, mold unit including mold body and outer surface, and driving unit connected to mold unit.

HUANG K, HUANG G

Wiring for semiconductor device, includes first metal portion, multilayer graphene, and second metal portion which are interposed between conductive portions.

KATAGIRI M, SAITO T, SAKAI T, MIYAZAKI H

Method for doping synthesized graphene by high temperature heat treatment in gas atmosphere containing dopant,.

HAM M H, SON M W, MYUNGWOO S

Manufacturing multilayer graphene e.g. suspended or deposited multilayer graphene used for device e.g. sensor involves depositing graphene monolayer having protective layer on top on sample containing another graphene monolayer.

ZURUTUZA ELORZA A, CENTENO PEREZ A, PESQUERA RODRIGUES A, ZURUTUZA E A, CENTENO P A, PESQUERA R A

Graphene nanoribbon used in a semiconductor device which his useful in electronic devices e.g. computers, smartphones, portable telephones and tablet terminals comprises a chiral edge to which an electron-withdrawing group is bonded.

OHTOMO M, OTOMO M

Manufacturing artificial graphite involves placing graphene film on surface of base, placing graphene film/base composite structure in reaction chamber and graphitizing carbon layer/graphene film/base composite structure in inert gas.

LIU P, ZHAO W, WANG J, JIANG K, FAN S

Process for preparing graphene layer with better electrical conductivity, involves doping zone of graphene layer to form doped graphene zone including stabilized sheet resistance, where doping is carried out by surface of graphene layer.

LE POCHE H, CARELLA A, DIJON J, OKUNO H, RAUX E

Manufacturing graphene film used for manufacturing pellicle involves coating graphene with protective film, removing base material by wet etching with etching liquid and dissolving protective film using solvent having lower surface tension.

YANASE Y, YANASE M, LIANG L