国家/地区 美国（9） 世界知识产权组织（8） 中国（6） 欧洲专利局（EPO）（3） 韩国（3） 日本（2） 台湾（2）
IPC部 B（10）
IPC大类 C01（10）
IPC小类 C01B（10）
IPC C01B031/04（8） B82Y040/00（5） C01B031/02（5）
B82Y030/00（4） C30B029/02（4） C23C016/26（3）
C01B032/186（2） C23C016/02（2） C23C016/56（2）
C30B001/02（2）
发明人 DING G（2） XIE X（2）
公开年 2012（10）
申请年 2011（5）  2012（5） 
专利权人 CHINESE ACAD.（2） DING G（2） SHANGHAI INS.（2） XIE X（2）

Growing a one or two monolayer film of graphene on a substrate, comprises depositing a first layer of graphene on the substrate, and annealing the carbon layer to form an ordered graphene layer one or two monolayers thick on the substrate.

KELBER J

Forming single-layer graphene film by replacing portion of air in a reactor having a substrate with a buffer gas, flowing the buffer gas through the reactor and then heating the reactor, and passing the buffer gas through liquid precursors.

RADHAKRISHNAN G, ADAMS P M

Copper foil used for manufacturing graphene, has glossiness or more than preset value, and average grain size more than preset value after being heated in atmosphere containing hydrogen and argon at specific conditions.

CHIBA YOSHIHIRO, CHIBA Y, YOSHIHIRO C, CHIBA G

Preparation of graphene by selecting substrate material, depositing directly catalyst and tetrabromomethane on substrate surface, and annealing substrate.

DI Z, DING G, GONG Q, LIU Q, WANG H, WANG S, XIE X

Making graphene on diamond substrate, comprises applying metal layer to crystallographic face of diamond substrate, and heating diamond substrate under vacuum to convert portion of diamond substrate at crystallographic face into graphene.

SUNG C, SONG J

Manufacture of graphene on silicon carbide substrate involves producing double-layer carbon membrane, depositing nickel film on silicon substrate, placing carbon surface of double-layer carbon membrane on nickel membrane, and annealing.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y

Producing graphene, comprises fixing seed crystal to support substrate, providing feedstock adjacent to seed crystal about the location, and applying laser beam to heat portion of seed crystal and portion of feedstock.

HAUCK J P

Producing an array of single-crystal graphene islands, to make e.g. transistor, comprises e.g. providing substrate, cleaning substrate surface, spin-coating poly(methyl methacrylate) layer on the surface, curing, and performing lithography.

YU Q, PEI S

Vapor phase epitaxy carbon fiber assembly used as electrode material of lithium cell, is aggregate of vapor growth carbon fiber having tubular graphene layer structure, and average fiber outer diameter in preset range.

HITOE Y, SUZUKI J, SATO H, KAWASHIMA S, SUZUKI A

Hexagonal boron nitride substrate used for manufacturing graphene nano belt used in electronic device, consists of boron nitride substrate layer and single atom layer.

DING G, JIANG M, TANG S, XIE X