国家/地区 中国（66） 美国（10） 世界知识产权组织（7） 澳大利亚（6） 韩国（6） 日本（5） 欧洲专利局（EPO）（3） 台湾（3）
IPC部 C（82） H（16） B（14）
G（7） D（3）
IPC大类 C01（82） C23（18） H01（15）
B82（10） B01（5） C09（4）
C30（4） C08（3） G01（3）
B32（2） C02（2） D01（2）
IPC小类 C01B（82）
IPC C01B032/186（82）
发明人 LI J（6） LI X（5） LIU Z（5）
WANG X（5） ZHANG Q（5） CHEN J（3）
CHU J（3） LI G（3） PENG X（3）
QING F（3） WANG C（3） XU S（3）
ZHANG J（3） BYUN K（2） CAI J（2）
公开年 2021（82）
申请年 2021（82）
专利权人 UNIV CHINA E.（5） BEIJING GRAP.（4） UNIV PEKING（4） UNIV SOUTHWE.（4）
GUANGDONG MO.（2） NINGBO INST .（2） SAMSUNG ELEC.（2） SUN H（2）
UNIV CHINA P.（2）

Method for forming film e.g. graphene film on substrate, involves supplying aromatic hydrocarbon gas having functional group, to substrate on which base film is formed, and activating aromatic hydrocarbon gas adsorbed on surface of base film by plasma of reaction gas containing rare gas.

MATSUMOTO T, IFUKU R

Large area graphene-based seawater desalination film comprises support layer and composite interlayer structural unit, where composite interlayer structural unit is sequentially provided with porous graphene layer, graphene oxide layer and porous graphene layer from bottom to top.

QING F, HOU Y, LI X

Reaction chamber for scale preparation device of chemical vapor deposition (CVD) deposited graphene, has discharge bur line that is connected with cathode, and is provided with three air inlets respectively carbon-derived gas inlet.

SUN H

Carrier for batch preparation of graphene film comprises supporting plates for placing substrate for growing graphene, heating plates for heating substrate, and electrode assembly connected with heating plates.

ZHU Y, MA Z, GAO X, SHAN J, JIA K, PENG H, LIU Z

Production system of single-layer porous graphene based on chemical process, comprises organic synthesis unit, material storage unit, graphene preparation unit, chemical punching unit, porous graphene transfer unit.

GAO Y, XIE L, XU Z, ZHANG Y, LIU Y

Graphene cold wall growth device, has power supply whose two poles pass through two through holes of reaction chamber, where two poles of power supply are connected with upper electrode plate and lower electrode plate.

CHEN Z, JI N, SHEN C, XU S, ZHANG J

Method for measuring thickness of graphene layer directly grown on silicon substrate by using X-ray photoelectron spectroscopy (XPS), involves obtaining effective attenuation length from linear relationship between measurement results by transmission electron microscope and XPS.

LEE E K, CHO Y J, KIM S W, BYUN K, SONG H J, SHIN H J

Single-layer planar graphene having uniform layer thickness, where graphene film is obtained by pre-treating copper foil, drying, placing in quartz tube, introducing argon, heat-treating, cooling, curing and finally transferring graphene on copper foil.

LI J, CHEN J, YE L, YU M

Method for forming graphene-substrate composite structure, involves fixing substrate through chemical vapor deposition chamber continuously at certain rate, where chemical vapor deposition in chemical vapor deposition chamber is deposited on substrate.

QI Y, CHENG Y, LI J, SHI P, LIU Z

Preparation method of a graphene-CMOS monolithic integrated detector chip, involves depositing isolation layer on surface of CMOS integrated circuit, and etching through hole in isolation layer to fill metal.

CHEN H, HUANG Y, ZHANG H, CHENG C, CHEN R, HUANG B