国家/地区 韩国（7） 中国（6） 日本（6） 美国（6） 台湾（4） 世界知识产权组织（4） 英国（2）
IPC部 C（20）
IPC大类 C01（20）
IPC小类 C01B（20）
IPC C30B029/02（8） C01B032/186（7） C01B032/194（6）
C23C016/26（6） C30B025/18（5） C01B032/182（4）
C01B032/184（3） C01B032/198（3） C23C016/02（3）
H01L021/02（3） C01B032/05（2） C01B032/156（2）
C01B032/16（2） C01B032/168（2） C01B032/19（2）
发明人 DIXON S（2） GUINEY I（2） HONG B H（2）
LI L（2）
公开年 2022（20）
申请年 2021（12）  2022（7） 
专利权人 GRAPHENE SQU.（2） PARAGRAF LTD（2） TOKYO ELECTR.（2） UNIV SEOUL N.（2）

Growing graphene nanoribbon involves depositing aromatic molecular seeds from gas phase onto surface of growth substrate, and growing graphene nanoribbon from aromatic molecular seeds via chemical vapor deposition, where growth substrate is germanium substrate.

JACOBBERGER R M, WAY A J, ARNOLD M S

Hydroxide radical generating system comprises up conversion layer including first up-conversion layer and second up-conversion layer, photocatalyst layer, and photonic crystal layer.

KIMHYEONGIL, IN J H

Graphene composite comprises substrate, first thin film positioned on substrate, and second thin film positioned on first thin film, where first thin film includes graphene and second thin film includes at least any one of vanadium selenide, vanadium disulfide, vanadium ditelluride, tantalum sulfide.

CHOI B K, CHANG Y J, JANG Y

Metal-graphene composite comprises metal layer and graphene layer provided by growing directly on one surface of metal layer, where graphene layer contains two and/or more graphene thin, metal layer is copper, nickel, cobalt, iron, manganese, chromium, vanadium, titanium, platinum, gold and aluminum.

KIM D J, HONG B H, WOO Y S, KIM D, YU Y S

Preparing composite dimension carbon atom framework van der Waals homogeneous structure temperature control physical defogging film comprises e.g. preparing powder-shaped carbon nanotube material, spraying cellulose acetate by connecting cellulose acetate solution and obtaining defogging film.

JIANG X, DONG H, TIAN B

Graphene element used as field effect transistor having top gate structure, comprises boron nitride layer having turbostratic structure, and graphene layer in contact with boron nitride layer.

KONDO O

Upper electrode assembly used in plasma processing apparatus, has heat transfer sheet that is mounted between electrode plate and metal plate and having vertically oriented portion with vertically oriented graphene structures.

TSUJIMOTO H, KOBUNE T, LI L, LEE L, KOBUNEDAKAKI

Metal catalyst layer used for producing graphene, laminated and crystallized on c-plane of substrate having corundum structure, having face-centered cubic structure.

NARUTSUKA S, NAKAJIMA R

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Forming a graphene layer structure used in Hall effect sensor, involves providing growth substrate having growth surface, and forming graphene layer structure on growth surface by chemical vapor deposition method, where growth surface is formed of material consisting of e.g. magnesium aluminate.

GRIFFIN R M, THOMAS S, GUINEY I, DIXON S