国家/地区 中国（7）
IPC部 C（7）
IPC大类 C01（7）
IPC小类 C01B（7）
IPC C01B032/186（7）
发明人 XU C（7）
公开年 2018（2） 2021（2）
申请年
专利权人 UNIV BEIJING.（4）

Growing high-quality graphene on insulating substrate at low temperature, involves using residual corrosive liquid deionized water drift cleaning substrate and drying, and using acetone and isopropanol to wash polymethyl methacrylate.

HU L, XIE Y, QIAN F, DENG J, XU C

Patterned growth of vertically oriented graphene useful e.g. in energy storage, involves prefabricating required pattern on target substrate by ultraviolet lithography, and growing graphene by plasma enhanced chemical vapor system.

XU C, QIAN F, DENG J, XIE Y, WANG Q, HU L

Device for large-scale continuously preparing vertically oriented graphene by plasma comprises e.g. vacuum chamber with baffle valve and connected to vacuum pump, and used to generating and emitting microwaves into vacuum chamber.

BO Z, YANG H, SU M, XU C

Graphene growth device comprises deposition chamber, heating box, double sealing structure comprising three-way valve, sealing pipe and sealing end head, air pumping system and inflation system.

XU C, WANG J, WANG X

Preparation of high quality graphene or two-dimensional metal carbide crystal vertical heterostructure material includes using bimetal laminate of upper copper foil or underlying metal foil as growth substrate, heating, growing and etching.

REN W, XU C, CHEN L, CHENG H

Direct growing method for large area graphene on oxide insulating substrate involves spin coating layer of polymethyl methacrylate (PMMA) film as an etching support layer after finishing growth of layer of graphene film on metal surface.

XU C, SUN J, DONG Y, XIE Y, PAN G, WANG Q, QIAN F

Method of improving quality of graphene on non-metallic substrate involves depositing layer of copper on graphene grown non-metallic substrate, performing chemical vapor deposition, and removing copper surface using oxygen plasma.

DENG J, FAN X, GUO W, SUN J, XU C, XU K