国家/地区 中国（80）
IPC部 C（80） B（15） G（9）
H（6） A（2） F（2）
IPC大类 C01（80） C23（12） B82（10）
G01（7） H01（6） C03（5）
C22（4） B01（3） A61（2）
C08（2） C25（2）
IPC小类 C01B（80）
IPC C01B032/186（80）
发明人 LI Z（7） WANG J（5） ZHANG J（5）
LI X（4） LIU X（4） LIU Z（4）
WEI X（4） ZHANG Y（4） CHEN J（3）
DUAN Y（3） FENG Z（3） GUO X（3）
HE Z（3） HUANG D（3） LI H（3）
公开年 2017（44） 2018（35）
申请年 2017（80）
专利权人 CHENGDU GELA.（4） UNIV PEKING（4） 13TH RES INS.（3） CHONGQING GR.（3）
SAMSUNG ELEC.（3） UNIV CHONGQI.（2） UNIV NANCHAN.（2） UNIV NANJING.（2）
UNIV SOUTHEA.（2） UNIV TIANJIN（2） UNIV TSINGHU.（2） UNIV XIAN JI.（2）

Vertical tube furnace useful for growing graphene comprises a furnace body, the furnace body is provided with process cabin, a transition chamber is disposed above or below the furnace body.

SHEN D, TAN P, LIU H, TAN H

Preparing graphene micro lattice involves using process of additive manufacturing to form three dimensional micro-lattice structure deposited on surface of core mould.

LI Z, ZHAO B, HOU H, XU Y

Preparation of nitrogen-doped graphene involves providing growth substrate and nitrogen-carbon solid source, heating growth substrate and nitrogen-carbon solid source and depositing crystal on surface of growth substrate.

FANG X, WAN J, YOU Y, XU Y, CHEN X

Preparation of high quality graphene or two-dimensional metal carbide crystal vertical heterostructure material includes using bimetal laminate of upper copper foil or underlying metal foil as growth substrate, heating, growing and etching.

REN W, XU C, CHEN L, CHENG H

Catalytically synthesizing three-dimensional graphene comprises mixing solid carbon source, metal salt catalyst and solvent, coating on surface of substrate, heat-treating in a protective atmosphere, and cooling.

GUO X, TAN Y, JIA Z

Semiconductor device comprises substrate comprising insulator and semiconductor comprising group IV material and/or group III-V compound, and graphene layer grown on surface of semiconductor.

SHIN K, SHIN H, CHO Y, NAM S, PARK S, LEE Y, SHIN K W, SHIN H J, CHO Y C, NAM S G, PARK S J, LEE Y S

Preparation of ultra-clean graphene involves using chemical vapor deposition, and providing foam copper above growth substrate.

LIU Z, PENG H, LIN L, ZHANG J, SUN L

Preparing graphene in closed static system for the preparation of integrated circuits, and optoelectronic devices, and sensors or solar cell, involves providing substrate, where substrate comprising catalyst, substrate.

LIU L, XU J, HU J, LI Q, LI W, LIU F

Graphene chip for isolating circulating tumor cells in liquid, comprises graphene sheet having stereoscopic geometric micro/nano structure, and antibody immobilized on graphene sheet surface to specifically recognize circulating tumor cells.

FAN J, WANG S, JIANG L, LI G

Device for preparing graphene composite, comprises shell, reaction chamber, spray gun, temperature control module, reaction gas conveying module, reaction container, and where one side of shell outer wall is provided with door.

LIU X, WEI X, WEI Z