国家/地区 中国（92）
IPC部 C（92） B（15） G（10）
H（5）
IPC大类 C01（92） C23（10） G01（9）
B82（8） B01（5） H01（4）
C03（3） C22（3） B22（2）
C08（2） C12（2）
IPC小类 C01B（92）
IPC C01B032/186（92）
发明人 ZHANG J（7） GAO X（5） LI Z（5）
LIU X（5） LIU Z（5） WANG Z（5）
YUE H（5） CHEN X（4） WANG W（4）
WEI X（4） XU Y（4） YU Z（4）
ZHANG H（4） ZHANG Y（4） CHEN M（3）
公开年 2018（92）
申请年 2018（53）  2017（35）  2016（4） 
专利权人 UNIV HARBIN .（5） UNIV PEKING（5） CHENGDU GELA.（4） HENGLI XIAME.（3）
UNIV SHANDON.（3） UNIV TSINGHU.（3） AVIC MFG TEC.（2） DEHUA LIXIN .（2）
SAMSUNG ELEC.（2） SAURER JIANG.（2） UNIV CHINA R.（2） UNIV NANCHAN.（2）
UNIV NANJING.（2） UNIV XINYANG（2）

Graphene nano-patterned sapphire substrate has nano-patterned sapphire substrate which is provided with graphene layer on surface and nano-pattern of nano-patterned sapphire substrate is tapered, plate-like or concave.

LIU Z, CHEN Z, GAO P

Preparing a three-dimensional graphene-foam nickel composite material comprises taking foam nickel as template, taking carbon hydrogen gas methane as C source, reducing atmosphere, synthesizing and generating composite material.

ZHAO C, YAO Q, AN S, YANG M, QI L

Preparing graphene micro lattice involves using process of additive manufacturing to form three dimensional micro-lattice structure deposited on surface of core mould.

LI Z, ZHAO B, HOU H, XU Y

Three-dimensional graphene preparation involves washing silicon wafer successively with deionized water, ethanol, acetone, drying silicon wafer, and then placing in inductively coupled plasma multi-system.

MA Y, WANG M, HAN J, CHEN X, WANG L, XIAO L, JIA S

Preparation of nitrogen-doped graphene involves providing growth substrate and nitrogen-carbon solid source, heating growth substrate and nitrogen-carbon solid source and depositing crystal on surface of growth substrate.

FANG X, WAN J, YOU Y, XU Y, CHEN X

Preparation of high quality graphene or two-dimensional metal carbide crystal vertical heterostructure material includes using bimetal laminate of upper copper foil or underlying metal foil as growth substrate, heating, growing and etching.

REN W, XU C, CHEN L, CHENG H

Catalytically synthesizing three-dimensional graphene comprises mixing solid carbon source, metal salt catalyst and solvent, coating on surface of substrate, heat-treating in a protective atmosphere, and cooling.

GUO X, TAN Y, JIA Z

Preparation of graphene-coated silica based on metal catalysis, involves introducing gaseous hydrocarbon carbon source to coat carbon atoms on surface of silica.

SUN X, NIE Y

Preparing P-type semiconductor graphene involves cleaning specific substrate, drying on reaction table, then vacuumizing and introducing argon protection gas, and subjecting treated product to microwave to adjust first reaction power.

CHEN M

Graphene film prepared by chemical vapor deposition having excellent purity, good mechanical properties, high flexibility and electrical conductivity.

GAO Y, GUAN W, YANG X