国家/地区 中国（56）
IPC部 C（56）
IPC大类 C01（56）
IPC小类 C01B（56）
IPC C23C016/02（56）
发明人 JIANG M（4） TANG S（4） XIE X（4）
DING G（3） LI Y（3） LI Z（3）
LIU Z（3） SHIN H（3） SHIN H J（3）
ZHANG X（3） ZHANG Y（3） BYUN K（2）
BYUN K E（2） CHEN L（2） DATSKOS P G（2）
公开年 2021（11） 2015（8） 2012（6） 2022（5） 2013（4） 2020（4） 2014（3） 2016（3） 2017（3） 2018（3） 2011（2） 2023（2）
申请年 2013（7）  2014（7）  2020（7）  2021（7）  2022（6）  2011（4）  2012（3）  2016（3）  2017（3）  2019（3）  2015（2）  2018（2） 
专利权人 SAMSUNG ELEC.（4） SHANGHAI INS.（4） CHINESE ACAD.（3） CHINESE ACAD.（2）
DENG P（2） GUO H（2） LAM RES CORP（2） LEI T（2）
UNIV BEIJING.（2） UNIV CALIFOR.（2） UNIV CHONGQI.（2） UNIV XIDIAN（2）
UTBATTELLE L.（2） ZHANG K（2） ZHANG Y（2）

Preparing secondary enhanced graphene gas gel useful in shoes, comprises introducing substrate layer on prepared graphene gas gel surface, performing chemical vapor deposition reaction and growing sheet layer or spherical graphene aggregate on surface of substrate layer.

ZHENG L, SHEN Y, ZHENG Y, WU L, WANG H

Improving quality of metal catalytic thin layer prepared by sputtering comprises cleaning Si/SiO2 substrate, photoetching the pattern, sputtering a layer of metal thin layer with the graphene of catalyzing and growing on the substrate sheet by using the sputtering table, peeling and etching.

ZHAO Y, YU X, LIU Z, NIE X, SONG Z, DENG J, HE X

Iron-based substrate for producing graphene, is derived from factory waste carbon iron sheet having specified thickness, surface roughness and carbon content.

ZANG X, CAO N, QI H, SHAO Q

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Preparation of graphene/molybdenum disulfide heterojunction semiconductor film comprises cleaning copper foil substrate and silicon dioxide/silicon substrate, growing molybdenum-disulfide film and depositing graphene thin membrane.

ZHANG L

Tantalum carbide-coated carbon material for e.g., LED manufacturing equipment, comprises a carbon substrate, and a tantalum carbide coating layer formed on the carbon substrate.

JO D W, CAO D, WAN J, CHO D W

Preparation method of graphene-coated metal particles used in industry, involves filtering metal particles with uniform particles filter and performing corona treatment on the surface of the metal particles, and then uniformly mixing corona treated metal particles surface with graphene powder.

LI A, LI J

Carrier substrate for transferring transfer layer from carrier substrate to product substrate, comprises carrier base substrate, protective layer, and transfer layer grown on protective layer.

BURGGRAF J, JUERGEN B

Seed layer for inducing nucleation to form layer of material used for fabricating semiconducting devices, comprises layer of two-dimensional monolayer amorphous material with disordered atomic structure to form electric potential wells for bonding adatoms to seed layer by van der Waals interaction.

OEZYILMAZ B, TOH C T, ABIDI I H, OJIYLMAZ B, TOH C, ZHUO Z, OZYILMAZ B

Directly growing graphene thin film on surface of non-metallic substrate, involves depositing aluminum oxide film on surface of substrate, evaporating copper film on surface of substrate deposited with aluminum oxide film, annealing and growing graphene by chemical vapor deposition.

LOU G, OUYANG Y, WANG W, LIU Z