国家/地区 中国（23）
IPC部 C（23） B（11） H（6）
IPC大类 C01（23）
IPC小类 C01B（23）
IPC C01B031/04（19） C23C016/26（15） C01B031/02（12）
B82Y040/00（8） B82Y030/00（7） C01B032/186（5）
C23C016/56（4） C23C016/02（3） C30B029/02（3）
H01L021/02（3） H01L029/16（3） B01J019/18（2）
B21B001/40（2） B21B003/00（2） B32B043/00（2）
发明人 DING G（4） XIE X（4） DENG P（3）
GUO H（3） JIANG M（3） LEI T（3）
ZHANG K（3） ZHANG Y（3） CHENG H（2）
CHIBA G（2） CHIBA Y（2） DI Z（2）
GONG Q（2） HONG B（2） HONG B H（2）
公开年 2012（23）
申请年 2012（23）
专利权人 CHINESE ACAD.（4） HANWHA TECHW.（3） SAMSUNG TECH.（3） SHANGHAI INS.（3）
UNIV XIDIAN（3） DENG P（2） GUO H（2） JX NIPPON MI.（2）
LEI T（2） NIPPON MININ.（2） NIPPON MININ.（2） UNIV SUNGKYU.（2）
UNIV SUNGKYU.（2） ZHANG K（2） ZHANG Y（2）

Structure, useful in e.g. a graphene device e.g. a transistor, comprises a substrate, a growth layer, a graphene layer, and a protective layer, where the growth layer is disposed on the substrate and has a groove.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T

Controllable layer number graphene thin film, prepared by preparing germanium-silicon substrate, carburizing and heating copper-nickel composite substrate with carbon source gas.

DING G, JIANG M, XIE X, ZHU Y

Method for non-destructively transferring graphene, involves nondestructively combining graphene coated with media with target substrate, and removing media to transfer graphene to target substrate nondestructively.

REN W, GAO L, MA L, CHENG H

Copper foil for manufacturing graphene, has specified sum total of oxides and sulfides having diameter of below preset value before heating under hydrogen and argon-containing atmosphere.

CHIBA Y, YAMAJI T, YOSHIHIRO C, TATSUYA Y, CHIBA G

Alloy method for preparing large area graphene thin film by depositing carbon alloy film on high temperature resistant substrate, annealing film, providing carbon atom concentration in alloy thin film surface and growing graphene thin film.

XU Z

Method for forming graphene pattern using exfoliation technique, involves selectively peeling graphene layer by polymer stamp, and forming raised pattern on rotator polymer stamp, where polymer stamp is made of polydimethylsiloxane.

AN K, CHUNG T, JUNG D, KIM C G, KIM H S, LEE S S, LEE Y K, AN K S, CHUNG T M, LEE S, LI Y, KIM C, KIM H

Manufacture of graphene used for e.g. touch screen, involves forming transition metal catalyst layer on substrate, supplying carbon source vapor to chamber and segregating graphene from carbon component in catalyst-layer surface.

JEON S, LEE J, OH S

Manufacture of graphene transparent thin film involves carrying out chemical vapor deposition of graphene film on substrate, coating polymethylmethacrylate or photoresist, and electrolyzing and separating film.

CHEN G, KONG D, LIANG Q, MEI J

Manufacture of graphene film used for e.g. transparent display, involves forming graphene on catalyst metal film, forming another film on surface of graphene, on which catalyst metal film is not formed, and removing catalyst metal film.

SONG Y, SONG Y I

Structural graphene production on silicon carbide substrate for manufacturing microelectronic devices includes depositing layer of silicon dioxide as mask, coating mask surface, and exposing to form structured pattern.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F