国家/地区 欧洲专利局（EPO）（41）
IPC部 C（41）
IPC大类 C01（41）
IPC小类 C01B（41）
IPC C01B032/186（41）
发明人 SHIN H（5） SHIN H J（5） SHIN K（4）
SHIN K W（4） BYUN K（3） BYUN K E（3）
CHO Y（3） CHO Y C（3） LEE C（3）
LEE C S（3） LEE E（3） LI C（3）
SHEN X（3） SONG H（3） SONG H J（3）
公开年 2015（7） 2017（7） 2018（5） 2016（4） 2020（4） 2021（4） 2012（2） 2013（2） 2022（2）
申请年 2016（7）  2017（7）  2015（5）  2014（4）  2019（4）  2013（3）  2010（2）  2020（2）  2022（2） 
专利权人 SAMSUNG ELEC.（8） COMMISSARIAT.（4） SHINETSU CHE.（2） SHINETSU CHE.（2）

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Weakly coupled enhanced graphene film for use in graphene photoelectric device, comprises an enhanced graphene structure based on weak coupling, where the enhanced graphene structure based on weak coupling comprises many graphene units stacked vertically; the graphene unit is a single graphene sheet.

LIU Y, FANG W, LI L, PENG L, GAO C, GOO C, FENG L, WEE D

Preparing neodymium-graphene composite material used as electrode material in electrolytic water hydrogen production device or as cathode material in fuel cell or metal-air battery, comprises preparing neodymium simple substance on graphene.

SA G, CHEN L, LIANG T, DENG Y, SAGAR R U R

Depositing layer of carbon nanostructures on substrate by providing substrate in processing chamber, providing processing gas in processing chamber having carbon monoxide gas and creating and sustaining gaseous plasma in processing chamber.

ZAPLOTNIK R, MOZETIC M, PRIMC G, VESEL A, HORI M, ODA O

Terminal of electric connector, has graphene film which is provided to be arranged between second surface and surface of opposite terminal when opposite terminal is electrically connected to terminal connecting portion.

KAWAI H, KAWAI Y

Manufacture of N-type graphene used for forming electrode, involves annealing graphene to be doped which is graphene-based material issued from initial graphene layer, in forming gas and N-doping graphene to be doped.

SUHAIL A, PAN G

Pellicle film for pellicle used as dust guard in photolithography during manufacture of e.g. semiconductor device, has main layer made of single crystal silicon, and graphene provided on both sides of main layer.

YANASE Y, YANASE M

Method of forming graphene on substrate, involves treating surface of substrate placed in reaction chamber with plasma, and growing graphene on surface of substrate by plasma enhanced chemical vapor deposition (PECVD).

SHIN K, KIM C, YAMAMOTO K, LEE C, SONG H, LEE E, BYUN K, SHIN H, AN S, SHEN J, JIN C, SHAN B, LI C, SONG X, LI Y, BIAN Q, SHEN X, AN X, SHIN K W, LEE C S, SONG H J, BYUN K E, SHIN H J, AHN S J

Method for manufacturing multilayer graphene, involves subjecting graphene precursor to chemical vapor deposition on metal substrate containing nonmetal element, manufacturing graphene that is doped with element on metal substrate.

CHO K, YOO M S, LEE H C, CHO K W, ZHAO J, YU M, LI X

Interconnect structure for use in electronic device, has cap layer provided on surface of conductive wiring and which includes nanocrystalline graphene comprising nano-sized crystals.

BYUN K, SHIN K, KIM Y, SHIN H, SONG H, LEE C, KIM C, CHO Y, BIAN Q, SHEN J, JIN Y, SHEN X, SONG X, LI C, JIN C, ZHAO L, BYUN K E, SHIN K W, HUN K Y, SHIN H J, SONG H J, LEE C S, CHO Y C