国家/地区 西班牙（12）
IPC部 B（12） C（12） H（2）
IPC大类 B82（12）
IPC小类 B82Y（12）
IPC B82Y040/00（12）
发明人 CHIBA G（3） CHIBA Y（3） GARCIA HERNANDEZ M .（2）
HERNANDEZ M D M（2） YOSHIHIRO C（2）
公开年 2012（4） 2011（3）
申请年 2012（4）  2011（2）  2014（2） 
专利权人 JX NIPPON MI.（3） NIPPON MININ.（3） NIPPON MININ.（3） CONSEJO SUPE.（2）

Production of graphene covalently functionalized with organic molecule for manufacture of e.g. electronics involves bombarding surface of system containing graphene and non-metallic substrate with beam of noble gas ions and heating.

ACEITUNO BUENO R, MARTINEZ RUIZ J I, LUCCAS R F, LOPEZ FAGUNDEZ M F, MOMPEAN GARCIA F, GARCIA HERNANDEZ M D M, MARTIN GAGO J A, BUENO R, RUIZ J I, FAGUNDEZ M F, GARCIA F, HERNANDEZ M D M, GAGO J A

Obtaining material deposited on substrate by plasma-assisted chemical vapor deposition used as component of window or touch panel and as component in protection system, involves forming one or more graphene layers.

MUNOZ GOMEZ R, GARCIA HERNANDEZ M D M, GOMEZALEIXANDRE FERNANDEZ C, GOMEZ R, HERNANDEZ M D M, FERNANDEZ C, MUNOZ G R, GARCIA H M D, GOMEZALEIXANDRE F C

Synthesizing reduced graphene oxide on a substrate from seedlac, comprises preparing the seedlac solution in alcohol having specified carbons, dipping the substrate into the solution, and heating the substrate which is a metallic sheet.

SHYAM K C, MANISH K B, TAPAN K R, SUMITESH D, RANJAN K S, YASHABANTA N S, ASHIT K P, VIKAS C S, CHOUDHARY S K, BHADU M K, ROUT T K, DAS S, SAHU R K, SINGHBABU Y N, PRAMANICK A K, SRIVASTAVA V C

Preparing graphene structure of 1-5 layers or controlling number of layers, involves introducing common substrate or substrate with powdered metal or substrate with definite pattern of metal inside reactor for chemical vapor deposition.

BERTRAN SERRA E, FREIRE SOLER V M, RAMIREZ SANCHEZ A, PASCUAL MIRALLES E, ANDUJAR BELLA J L

Copper foil used for manufacturing graphene, comprises copper with specific purity.

CHIBA Y, ONO T, CHIBA G

Method for non-destructively transferring graphene, involves nondestructively combining graphene coated with media with target substrate, and removing media to transfer graphene to target substrate nondestructively.

REN W, GAO L, MA L, CHENG H

Copper foil for manufacturing graphene, has specified sum total of oxides and sulfides having diameter of below preset value before heating under hydrogen and argon-containing atmosphere.

CHIBA Y, YAMAJI T, YOSHIHIRO C, TATSUYA Y, CHIBA G

Copper foil used for manufacturing graphene, has glossiness or more than preset value, and average grain size more than preset value after being heated in atmosphere containing hydrogen and argon at specific conditions.

CHIBA YOSHIHIRO, CHIBA Y, YOSHIHIRO C, CHIBA G

Producing graphene oxide nanoplatelets and derived products, comprises e.g. dosing e.g. a hydrocarbon or mixture of hydrocarbons, placing dosed compounds inside a furnace, and obtaining intermediate material comprising carbon nanofilaments.

MERINO S C, MARTIN G I, VARELA R H, MERINO A M D P, MERINO SANCHEZ C, MARTIN GULLON I, VARELA RIZO H, MERINO AMAYUELAS M D P, RIZZO H V, SANCHEZ C M, OMARYERAS M D P M, GULLION I M

Carbon-film laminate used for graphene-based electronic device, has monocrystal substrate, copper single-crystal thin film epitaxially grown on substrate, and graphene formed on copper single-crystal thin film.

HASEGAWA MASATAKA, ISHIHARA MASATOU, KOGA YOSHINORI, KIM JAEHO, TSUGAWA KAZUO, IIJIMA SUMIO, HASEGAWA M, ISHIHARA M, KOGA Y, KIM J, TSUGAWA K, IIJIMA S, YOSHINORI K, HO K J, KAZUO T, SUMIO I, MASATAKA H, MASATOU I, JAEHO K