国家/地区 日本（23）
IPC部 C（23）
IPC大类 C01（23）
IPC小类 C01B（23）
IPC C23C016/26（13） C01B032/186（12） C01B032/194（6）
C23C016/02（6） C23C016/04（6） H01L021/02（6）
C23C016/44（5） C23C016/455（5） C23C026/00（5）
C01B032/198（4） C23C016/56（4） B82Y030/00（3）
B82Y040/00（3） C01B032/05（3） C01B032/182（3）
发明人 IFUKU R（2） MATSUMOTO T（2） NARKEVICIUTE I（2）
VARADARAJAN B N（2）
公开年 2021（23）
申请年 2020（12）  2021（6）  2019（5） 
专利权人 LAM RES CORP（2） NAT INST ADV.（2） TOKYO ELECTR.（2） UNIV SINGAPO.（2）
YAZAKI CORP（2）

Method for forming film e.g. graphene film on substrate, involves supplying aromatic hydrocarbon gas having functional group, to substrate on which base film is formed, and activating aromatic hydrocarbon gas adsorbed on surface of base film by plasma of reaction gas containing rare gas.

MATSUMOTO T, IFUKU R

Structure e.g. porous metal-coated structure used for e.g. catalytic application, comprises substrate comprising activated adsorbent material, and metal material deposited on substrate.

PEPIN P, ETHRIDGE K, THOMSON C, HOLBROOK B, ESRIDGE K

Continuous production apparatus of multiple types of carbon film, comprises reduction section for reducing substrate placed on belt conveyor, and raw material carbon source supply section that supplies raw material carbon source.

WATANABE J

Producing surface-treated metal plate by mixing graphene oxide and melamine or water-soluble melamine resin with water, immersing metal plate chosen from steel plate in suspension containing graphene oxide-melamine complex and integrating metal ions eluted from metal plate and complex on metal plate.

FURUKAWA H, HAGA M, YAMAMOTO T

Preparing gas selective separation filter involves providing graphene membrane on sacrificial support layer, subjecting graphene membrane to transient pressurized ozone gas pulse, purging ozone, and cooling down ozone treated graphene membrane.

AGRAWAL K V, HUANG S, HSU K, AGRAWAL K, HWANG S, HUSH K, XU G

Manufacture of dense layer of electrochemical device, involves providing substrate and suspension of non-agglomerated nanoparticles of material having specific particle size distribution, depositing layer on substrate, drying and densifying.

GABEN F

Seed layer for inducing nucleation to form layer of material used for fabricating semiconducting devices, comprises layer of two-dimensional monolayer amorphous material with disordered atomic structure to form electric potential wells for bonding adatoms to seed layer by van der Waals interaction.

OEZYILMAZ B, TOH C T, ABIDI I H, OJIYLMAZ B, TOH C, ZHUO Z, OZYILMAZ B

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A

Encapsulating graphene in semiconductor substrate, comprises selectively depositing graphene on metal layer, depositing metal oxide over graphene by thermal-based deposition technique, and depositing hermetic barrier over metal oxide.

VARADARAJAN B N, NARKEVICIUTE I, SHARMA K

Electrical interconnect component comprises connection part that is electrically conductive; and electrical contact on at least a part of a surface of connection part and comprising a graphene oxide film.

YE N, KUBO T, SHIMIZU T