国家/地区 韩国（26）
IPC部 C（26） B（18） H（11）
F（2） G（2）
IPC大类 C01（26）
IPC小类 C01B（26）
IPC C01B031/04（24） C23C016/26（21） B05D001/00（6）
C01B032/186（6） C01B031/02（4） C01B032/194（4）
C23C016/01（4） C23C016/455（4） H01L029/16（4）
B05B001/30（3） B82Y040/00（3） C01B032/182（3）
C01B032/184（3） C23C014/34（3） C23C016/02（3）
发明人 LEE Y T（9） KIM H（2） PARK S（2）
公开年 2016（26）
申请年 2016（14）  2015（11） 
专利权人 LEE Y T（9） SAMSUNG ELEC.（2） SNU R DB FO.（2） UNIV SEOUL N.（2）
UNIV SUNGKYU.（2）

N-doping of graphene for N-doped graphene oxide/graphene bilayered structure, involves forming graphene oxide by oxygen-plasma treatment of graphene, transferring graphene oxide to another graphene and doping with functional group.

CHO H J, SEO Y M, WHANG D

Method for synthesizing multi-layer graphene e.g. trilayer graphene, involves heat-treating catalytic metal layer on substrate while supplying methane gas, and synthesizing multi-layer graphene on heat-treated catalytic metal layer.

HAM M, SON M, HAM M H, SON M W, XIAN W, SUN M

Packing apparatus for protecting graphene, comprises synthesizing chamber for defining space for synthesizing graphene on metallic foil, and first and second roll chamber formed respectively on both sides of synthesizing chamber.

CHO S W, KIM K S, KIM Y J, LEE I B

Formation of nitrogen-doped porous graphene envelope for metal catalyst involves vaporizing organic precursor and nitrogen precursor, heating substrate particles in reactor, and supplying the precursors using carrier gas to reactor.

KIM H, JANG B, KWON G H, KIM H Y, JANG B Y

Graphene film manufacturing device comprises wrinkles flattening device, base substrate, graphene film, porous adsorption member, hollow space and vacuum suction port.

WAN S K, HEE H J, HEE H B, KIM W S, HAN J H, HONG B H

Doping method of graphene for manufacturing graphene composite electrode and graphene structure, involves forming precursor polymer layer for doping on substrate, and positioning graphene on substrate.

MOON J, PARK W, PARK S, JO I, HONG B, SAN MOON J, SU C I, BAE P W, BEOM P S, HUI H B, ZHENSHAN W, WONBAE P, SUBEOM P, INSU J, BYUNGHEE H

Process for forming high surface area graphene structure of super-capacitor used with battery, involves removing silicide regions to provide silicon carbide structure having highly irregular surface and surface layer of graphene.

AHMED M, IACOPI F

Seamless hexagonal boron nitride atomic monolayer thin film used for fabricating graphene device, has pseudo-single crystal structure having seamlessly merged boron nitride grains having preset dimension.

SUH H, SONG Y, WU Q, LEE S, KIM M, PARK S, KIM M W, LEE S J, PARK S W, SONG Y J, SUH H S

Method for transferring high-quality chemical vapor deposition-grown monolayers of graphene from copper formation substrates to target substrates, involves transferring graphene layer formed on formation substrate to target substrate.

JOHNSON B Y, MAZUMDER P, SONI K K

Piezo injection system of gas blower for use in noncatalytic substrate growth graphene manufacturing device, performs electrical discharge, fluid pressure reduction, valve closure, needle closure and gas injection pause orderly.

LEE Y T