国家/地区 台湾（23）
IPC部 C（23）
IPC大类 C01（23）
IPC小类 C01B（23）
IPC C30B029/02（16） C01B031/04（15） C01B031/02（8）
C30B025/18（8） B82Y030/00（7） B82Y040/00（7）
C01B032/186（7） C23C016/26（6） H01L021/02（6）
C01B032/182（5） C23C016/02（5） H01L021/20（5）
B82B003/00（3） C01B032/184（3） C01B032/194（3）
发明人 HUANG K（3） KOU C（3） VEERASAMY V（3）
VEERASAMY V S（3） BERRY V（2） CHANG C（2）
CHANG C C（2） CHIBA Y（2） CHIBA YOSHIHIRO（2）
DIXON S（2） GUINEY I（2） HUANG K P（2）
KOU C S（2） SEACRIST M R（2）
公开年 2014（4） 2017（4） 2022（4） 2011（3） 2012（2） 2013（2） 2015（2）
申请年 2013（5）  2012（4）  2015（4）  2009（2）  2021（2）  2022（2） 
专利权人 GUARDIAN GLA.（3） GUARDIAN IND（3） GUARDIAN IND.（3） IND TECHNOLO.（3）
NIPPON MININ.（3） JX NIPPON MI.（2） MAX PLANCK G.（2） PARAGRAF LTD（2）
SUNEDISON SE.（2）

Upper electrode assembly used in plasma processing apparatus, has heat transfer sheet that is mounted between electrode plate and metal plate and having vertically oriented portion with vertically oriented graphene structures.

TSUJIMOTO H, KOBUNE T, LI L, LEE L, KOBUNEDAKAKI

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Forming a graphene layer structure used in Hall effect sensor, involves providing growth substrate having growth surface, and forming graphene layer structure on growth surface by chemical vapor deposition method, where growth surface is formed of material consisting of e.g. magnesium aluminate.

GRIFFIN R M, THOMAS S, GUINEY I, DIXON S

Tantalum carbide-coated carbon material for e.g., LED manufacturing equipment, comprises a carbon substrate, and a tantalum carbide coating layer formed on the carbon substrate.

JO D W, CAO D, WAN J, CHO D W

Manufacture of graphene-based device used for e.g. gas sensor, involves providing graphene assembly, transferring graphene assembly to substrate, using photolithography and removing UV barrier layer and photoresist layer.

MIGLIORATO M, KUMAR R, MONTEVERDE U

Formation of multilayer structure, involves epitaxially depositing graphene layer on layer comprising cobalt that is in contact with dielectric layer and has semiconductor wafer with front wafer surface contacting dielectric layer.

BERRY V, BEHURA S, NGUYEN P, SEACRIST M R

Manufacture of graphene for graphene material, involves purging hydrocarbon gas and auxiliary gas into variable pressure coupled plasma apparatus, applying intermediate frequency electromagnetic wave and dissolving hydrocarbon gas.

HUANG K, ZHANG Z, KOU C, HUANG K P, CHANG C C, KOU C S

Graphene flower and composite material which includes introducing a carbon hydrogen gas and a assistance gas into a transformer coupled plasma equipment.

HUANG K, CHANG C, KOU C, HUANG K P, CHANG C C, KOU C S

Method for manufacturing graphene flower which includes introducing a carbon hydrogen gas.

HUANG K, CHANG C, KOU C

Method for growing two-dimensional crystals e.g. graphene, involves heating crystal-growing furnace to enable reaction gas to react on stacked substrate, and forming two-dimensional crystal on surface of sub-substrates in stacked substrate.

HSIEH Y, HOFMANN M, CHIU Y