国家/地区 中国（9）
IPC部 C（9）
IPC大类 C04（9） C23（2）
IPC小类 C04B（9）
IPC C04B041/50（6） C04B041/85（4） C04B035/52（2）
发明人 GUO H（4） LEI T（4） ZHANG K（4）
ZHANG Y（4） ZHAO Y（4） BAI T（2）
HUANG F（2）
公开年 2013（9）
申请年 2012（9）
专利权人 UNIV XIDIAN（4） CHINESE ACAD.（2） UNIV DONGHUA（2）

Graphene load porous ceramic electrically conductive material preparation method, involves reducing porous ceramic material surface with layer of metal, and obtaining conductive material by chemical vapor deposition process in furnace.

BI H, HUANG F, ZHOU M

Manufacture of graphene powder for e.g. photoelectric device, involves decomposing organic substances by fast heating in oxyhydrogen flame, and reconfiguring produced active carbon atoms on insulating substrate or catalyst substrate.

HUANG F, LIN T

Preparation of graphene-based nanosilver composite, involves adding graphene oxide to water/organic solvent mixture, ultrasonically dispersing, adding silver nitrate solution, reflux-reacting, filtering, washing, and drying.

WANG M, RAN C, GAO Y

Manufacture of rare earth doped modified carbon nanotube and graphene composite film involves immersing pretreated glass substrate in rare earth modified carbon nanotube-graphene, removing substrate and baking.

BAI T

Preparation of silicon substrate patterned graphene for semiconductor element, involves growing silicon carbide layer, silica layer, pattern window, and carbon film on substrate, removing silica, coating copper film, and annealing.

GUO H, ZHANG K, ZHANG Y, ZHAO Y, LEI T, ZHANG C

Preparation of patterned graphene material for transistor, by cleaning silicon carbide wafer, coating photoresist layer, placing in buffered hydrofluoric acid solution, carrying out electron beam deposition of nickel film, and patterning.

LEI T, ZHANG Y, TANG X, ZHANG K, ZHAO Y, GUO H

Preparation of rare earth modified graphene ceramic on mono-crystalline silicon piece of composite film includes completely carrying out hydroxylation, hydrolyzing, adding graphene in rare earth sol-gel, and drying.

BAI T

Preparation of graphene used for manufacturing high-mobility graphene transistor comprises growing carbon layer on substrate, growing carbon-silicon carbide layer and performing physical vapor deposition to plate copper film.

GUO H, ZHAO Y, LEI T, ZHANG Y, ZHANG K

Preparation of graphene used for manufacturing high-mobility graphene transistor comprises performing plasma-enhanced chemical vapor deposition to deposit silicon dioxide and performing physical vapor deposition to plate copper film.

ZHANG Y, WEI C, LEI T, ZHANG K, GUO H, ZHAO Y