国家/地区 中国（7） 美国（5） 日本（3） 世界知识产权组织（3） 韩国（2） 台湾（2）
IPC部 C（8）
IPC大类 C23（8）
IPC小类 C23C（8）
IPC C23C014/06（8）
发明人
公开年 2013（4） 2014（3）
申请年 2013（8）
专利权人

Use of amine precursor or its ammonium salt for depositing graphene film on substrate by chemical vapor deposition (CVD).

SCHWAB M G, MUELLEN K, SACHDEV H, ITO Y, SCHWAB M G S, MILLEN K

Manufacturing graphene layer by performing sputtering process to form graphite layer on substrate, and performing lithography process on graphite layer for thinning graphite layer and making graphite layer thinned to become graphene layer.

HUANG C, CHIU S, CHUNG C, WU B, HUANG J, QIU S, ZHONG C, HUANG C H, CHIU S M, CHUNG C J, WU B H

Forming method for graphene barriers for interconnects, involves heating dielectric body, first layer and second layer, so to convert of amorphous carbon to graphene.

NIYOGI S, LANG C

Preparation of graphene involves injecting germanium ion to silicon carbide substrate, annealing obtained structure, breaking silicon carbide substrate to silicon and carbon, combining silicon and germanium, and recombining carbon.

DI Z, CHEN D, DING G, WANG G, XIE X, ZHANG M, YE L, ZHENG X, LU Z

Film-forming apparatus for forming graphene film on film-forming target e.g. metallic foil, has roll-to-roll mechanism which provides tensile force relaxation unit that relaxes tensile force applied to transported film-forming target.

KOBAYASHI T, SHIMIZU K, KADONO K, MIZUGUCHI Y, MURAKAMI Y, MIZUKUCHI Y, SUMINO K

Manufacturing electrical conductor used in e.g. cables and printed circuit boards involves providing base substrate; providing foil; depositing graphene layer on foil to define layered structure; and depositing structure on base substrate.

MARTENS R I

Graphene nano-conductive iridium-catalytic thin film preparation method, involves connecting vacuum chamber shell with common anode, obtaining graphene nano conductive iridium catalytic film, and obtaining iridium plate.

CHEN Z, HE J, LI B, WANG L, NIE L

Manufacture of hexagonal boron nitride film used for graphene optoelectronic device, involves carrying out physical vapor deposition of boron atoms from solid boron source on substrate.

CHEN H, XU M