国家/地区 中国（7） 美国（5） 欧洲专利局（EPO）（4） 世界知识产权组织（4） 日本（3） 台湾（2）
IPC部 C（13）
IPC大类 C23（13）
IPC小类 C23C（13）
IPC C23C014/06（13）
发明人
公开年 2015（6） 2014（5） 2016（2）
申请年 2014（13）
专利权人

Manufacturing method of graphene laminated structure, involves setting film thickness of iron carbide film more than thickness of boron nitride layer.

OSHIMA H

Graphene manufacturing method by which high quality and large-area of continuous graphene layer can be directly generated on metal or nonmetal substrate.

HU C, HU C L

Preparing carbonaceous material used in electrode of electrochemical capacitor employed in electrolytes, comprises subjecting carbon material with a form of nano-structured monolithic, carbon nanotubes or layers of graphene.

LOTA G, TYCZKOWSKI J, MAKOWSKI P, LOTA K, ACZNIK I, PEZIAK D

Forming graphene film comprises placing substrate and carbon source into reaction chamber having gas inlet, and heating carbon source under flow of hydrocarbon-free gas to convert portion of carbon source into graphene film on the substrate.

DIJON J, TYURNINA A

Tire includes cover film made entirely of graphite or graphene deposited on inner surface of rubber inner layer that faces inner cavity of carcass.

FORTE G, FIORENZA P, PEZZULLO G

Method for modifying e.g. I-V characteristics, of graphene i.e. semiconductor film, involves placing graphene film in vacuum environment, and radiating graphene film with electron beam to obtain graphene material.

HUANG C, CHU C, CHIU S, WANG C, WEI C, CHUNG C, WU B, HUANG J, QIU S, WANG J, ZHU J, WEI J, ZHONG C, HUANG C H, CHU C W, CHIU S M, WANG C C, WEI C M, CHUNG C J, WU B H

Home appliance has graphene layer that is coated into surface of metal material which is made of carbon atoms.

DURAN H C, KARAHASANOGLU C, YUECEL M, YUCEL M

Coated article comprises a low temperature component and a graphene coating formed from applying the graphene derivative over the low temperature component.

KALAGA M K, BHATTACHARYYA A, DEVI R M, SCHAEFFER J C, PARAKALA P, PABLA S S, SHEFFIELD J C, PALAKARA P, PABRA S S, CARAGA M K, DEVIE R M

Method for growing graphene in dielectric material directly, involves cleaning silicon wafer with ethyl alcohol, acetone and deionized water, placing small aromatic molecules in crucible, followed by depositing, annealing and etching.

WANG Q, ZHANG Y, SUN X, ZHUO Q

Method for forming graphite-based structure used for e.g. electronic devices, involves patterning substrate, forming elements on substrate, depositing graphene initiating layer on top surface of each element, and generating graphene.

DAVIS M A