国家/地区 中国（8）
IPC部 C（8）
IPC大类 C30（8）
IPC小类 C30B（8）
IPC C23C016/26（5） C30B025/02（5） C30B025/18（5）
C30B029/02（4） C01B031/04（3） C23C016/02（2）
C30B033/02（2）
发明人 LEI T（8）
公开年 2012（8）
申请年 2012（7） 
专利权人 UNIV XIDIAN（8）

Preparation of structured graphene at 3C-silicon carbide substrate for preparing microelectronic device, by placing washed silicon substrate in chemical vapor deposition system, vacuumizing, heating, introducing propane, and carbonizing.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG C, ZHANG F

Preparation of large-area graphene used for sealing gas or liquid, by vacuumizing cleaned silicon substrate in chemical vapor deposition system in presence of hydrogen, carbonizing, introducing propane to form carbide layer, and heating.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y

Formation of graphene on 3C-silicon carbide substrate involves carbonizing silicon substrate, forming carbon film, carrying out heteroepitaxial film growth, reducing, reacting with carbon tetrachloride, and annealing.

DENG P, GUO H, LEI T, LV J, ZHANG K, ZHANG Y

Manufacture of graphene on silicon carbide substrate involves producing double-layer carbon membrane, depositing nickel film on silicon substrate, placing carbon surface of double-layer carbon membrane on nickel membrane, and annealing.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y

Manufacture of large-area graphene used for sealing gas and liquid, involves adding hetero-epitaxy film to quartz tube, heating, adding mixed gas of argon and chlorine, generating carbon layer, and annealing.

DENG P, GUO H, LEI T, LV J, ZHANG K, ZHANG Y

Preparing graphene based on copper film auxiliary annealing, useful for sealing gas and liquid, comprises cleaning silicon substrate, obtaining 3C-silicon carbide heteroepitaxial film, reacting, annealing, reconstructing and removing film.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y

Forming graphene involves putting cleaned silicon substrate into chemical vapor deposition system reaction chamber, heating, placing specific hetero-epitaxy film, depositing nickel film on the substrate by electronic beam, and annealing.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y

Method for epitaxially growing graphene on silicon carbide wafer involves processing silicon carbide wafer with hydrogen and silane to remove oxide produced on wafer surface, and supplying argon.

LEI T, WANG D, TANG X, LEI J, WANG Y, ZHANG Y, WANG H