国家/地区 中国（11）
IPC部 C（11）
IPC大类 C30（11） C01（3） C23（3）
H01（3）
IPC小类 C30B（11）
IPC C30B025/18（5） C30B029/02（5） C01B032/186（2）
C23C016/26（2） C30B025/16（2） C30B029/40（2）
H01L021/02（2）
发明人 WANG X（11）
公开年 2018（2） 2020（2） 2022（2） 2023（2）
申请年 2022（3）  2018（2）  2021（2） 
专利权人 BEIJING GRAP.（2） UNIV PEKING（2）

Preparation of single crystal graphene film for forming electronic devices, involves laminating copper foil and base metal foil, heating, performing roll-to-roll monocrystalline graphene film growth on molten copper foil, and growing roll-to-roll single crystal graphene film.

LUO G, WANG G, WANG X, LI J, ZHANG B

Preparation of wafer-level self-supporting cadmium-tellurium thin film used in electronic device, involves cleaning two-dimensional material/sapphire substrate, assembling two-dimensional material/sapphire substrate and support by molten metal material, and growing cadmium telluride thin film.

WANG J, WANG X, TANG X, CAO H, BAI W

Preparing gallium nitride single crystal substrate utilizing edge metal mask technology, comprises e.g. providing gallium nitride epitaxial film with nitrogen lattice polarity without biaxial stress, heating hydride vapor phase epitaxy cavity and trimming gallium nitride single crystal thick film.

ZHANG G, SHEN B, WU J, WANG T, GUO Y, LIU Q, LIU F, WANG X

Preparation of ultrathin beta-radiation source for micro-components, involves using polymethyl methacrylate/graphene film and platinum sheet, and depositing beta-radiation source on graphene using solution of e.g. beta-radiation source.

ZHANG J, LI C, WANG X, XU P, FENG H, CHEN Z, YANG Y, WU W, ZHOU C, LUO T

Chemical vapor deposition (CVD) graphene production device comprises movably connected support base, multiple graphene growth substrates and top cover, where support base is ring-shaped closed structure.

ZHANG B, LI J, WANG X, XU Z

New mixed rare earth-transition element doped up-conversion laser crystal, prepared by using mixed crystal of sodium yttrium tetrafluoride and zirconium tetrafluoride, ytterbium(III) ions, erbium(III) ions and graphene quantum dots.

LI D, WANG D, XU X, WANG X, LIU J

Preparation of easy differentiation polycrystalline silicon wafers involves mixing aluminum alloy powder and silicon carbide, spraying with graphene ethanol dispersion, pickling, refining, degassing, machining and bonding with core plates.

WANG X

Preparing single crystal graphene sheet from papermaking black liquor used in transparent conductive materials, involves performing hydrothermal carbonization of papermaking black liquor, and adjusting reaction conditions.

WANG X, DING Z, WU P, LI F, SUN R

Single crystal gallium nitride film growing involves forming amorphous silicon oxide layer on silicon substrate, transferring single crystal graphene to obtained silicon substrate, and then pretreating single crystal graphene surface.

YANG X, SHEN B, FENG Y, ZHANG Z, LIU K, ZHANG J, XU F, WANG X, TANG N

Graphene boundary control method comprises providing an insulating substrate, placing in a growth chamber, introducing first reaction gas and controlling the flowrate of first reaction gas.

WANG H, CHEN L, HE L, XIE H, WANG X, XIE X