国家/地区 中国（9）
IPC部 C（9）
IPC大类 C30（9）
IPC小类 C30B（9）
IPC C30B023/00（9）
发明人 DOU W（2）
公开年 2018（3）
申请年 2013（2）  2017（2） 
专利权人 UNIV SHAOXIN.（2）

Improving quality of metal catalytic thin layer prepared by sputtering comprises cleaning Si/SiO2 substrate, photoetching the pattern, sputtering a layer of metal thin layer with the graphene of catalyzing and growing on the substrate sheet by using the sputtering table, peeling and etching.

ZHAO Y, YU X, LIU Z, NIE X, SONG Z, DENG J, HE X

Graphite substrate useful for manufacturing light emitting diode epitaxial wafer in semiconductor field, comprises graphite disc and multiple annular isolation layer, where surface of graphite disc is provided with multiple grooves for containing epitaxial wafer.

LI P, LU X, XIAO Y, GUO B, DING T, GE Y

Preparation of silicon carbide graphene substrate epitaxial material by growing silicon carbide base layer, growing silicon carbide-graphene layer and preparing special device to process silicon carbide-graphene composite layer.

Preparing large-sized high-quality single-layer graphene involves drying frosted glass after washing, and uniformly coating liquid phase substrate on surface, and coating frosted glass with liquid phase substrate.

LU C, YE G, LI L, YU S, ZHAO X

Continuous preparation of ultra-large single crystal film useful in e.g. graphene film, involves heating single small crystal domain and growing ultra-large single crystal film on surface of high-temperature resistant substrate.

WU M, ZHANG Z, XU X, YU D, WANG E, LIU K

Preparation of nanowire-shaped organic single crystal domain for use in organic semiconductor device, involves spin-coating surface of copper-based graphene with poly(methyl methacrylate), annealing, depositing pentacene molecular film.

DOU W, SHI B

Preparing phthalocyanine monocrystalline thin films on graphene substrate modified by copper film comprises e.g. cutting the copper-based graphene, annealing, heating, and naturally cooling, and loading graphene substrate.

DOU W

Preparation of graphene film comprises providing insulating substrate, placing in growth chamber, heating, introducing gas containing catalytic element, reacting, and introducing carbon source.

DING G, JIANG M, LU G, XIE X, TANG S, WU T, XIE H, ZHANG X, JIANG D, WANG H

Preparing single crystal graphene, by depositing metallic film on mica substrate, vacuumizing deposited film, introducing hydrogen gas and argon, raising temperature, and continuously introducing methane gas with hydrogen gas and argon.

LIANG S, CAO J, FENG J, QI J, ZHANG L