国家/地区 中国（8） 日本（7） 美国（7） 欧洲专利局（EPO）（6） 世界知识产权组织（6） 韩国（5） 印度（3） 墨西哥（3） 俄罗斯（3） 台湾（3） 西班牙（2）
IPC部 C（11）
IPC大类 C01（11）
IPC小类 C01B（11）
IPC C30B029/02（11）
发明人 VEERASAMY V（3） VEERASAMY V S（3）
公开年 2011（11）
申请年 2011（5）  2009（3）  2010（3） 
专利权人 GUARDIAN GLA.（3） GUARDIAN IND（3） GUARDIAN IND.（3）

Method for preparing single-crystal graphene in electronic device, involves coating hydrocarbon in metal foil, implementing thermal decomposition treatment in foil, and cooling foil to room temperature to obtain graphene sheet metal.

CHEN Y, LI P, LI Y, WANG Z, ZHANG W

Manufacturing graphene, comprises performing vapor phase epitaxy on substrate comprising silicon carbide surface, and controlling sublimation of silicon from the substrate by flow of e.g. inert gas (argon) through epitaxial reactor.

STRUPINSKI W, STRUPIAFSKI W, STRUPINSKI W O

Preparation of sulfur-doped graphene thin film by heating and preprocessing metal substrate in atmosphere of reduction protective gas, vacuuming container, and introducing mixed liquid of carbon source and sulfur source.

GAO H

Manufacture of graphene film for photoelectron engineering device, involves preparing monocrystal substrate, providing monocrystalline catalyst layer, processing, heating gaseous carbon source and cooling.

FUJITA D, XU M S, JO A

Carbon-film laminate used for graphene-based electronic device, has monocrystal substrate, copper single-crystal thin film epitaxially grown on substrate, and graphene formed on copper single-crystal thin film.

HASEGAWA MASATAKA, ISHIHARA MASATOU, KOGA YOSHINORI, KIM JAEHO, TSUGAWA KAZUO, IIJIMA SUMIO, HASEGAWA M, ISHIHARA M, KOGA Y, KIM J, TSUGAWA K, IIJIMA S, YOSHINORI K, HO K J, KAZUO T, SUMIO I, MASATAKA H, MASATOU I, JAEHO K

Preparation of oxygen and hydrogen doped graphene by preparing intermediate film by reacting water solution and substance containing hydrogen, oxygen, and carbon element, polymerizing at hydrothermal condition, and hot processing.

LIU S, CHEN X, SONG L, TANG L, ZHUANG J, MA Y, JI R, WANG Y

Manufacturing structure comprising semiconductor substrate and modified graphene layer, comprises supplying initial structure comprising standard graphene layer, and hydrogenating initial structure with exposure dosage of hydrogen gas.

CHIANG S, ENRIQUEZ H, OUGHADDOU H, SOUKIASSIAN P, TEJEDA G A, VIZZINI S, TEJEDA GALA A, GALA A T

Making isotopically enriched graphene, comprises e.g. accelerating ion beam with an electric field towards substrate; and using magnetic or electric field generating devices to separate the ion beam into many component ion beams.

BARKER D L, OWENS W R, BECK J W

Manufacture of doped graphene thin film for electrochromic devices comprises hetero-epitaxially growing intermediate graphene thin film on catalyst thin film, and doping intermediate graphene thin film with n- or p-type dopants.

VEERASAMY V S, VEERASAMY V

Method for isolating graphene thin film involves causing graphene thin film and polymer-based coating to be released from catalyst thin film, after curing polymer-based coating.

VEERASAMY V S, VEERASAMY V